TY - JOUR
T1 - LaTiOxNy Thin Film Model Systems for Photocatalytic Water Splitting
T2 - Physicochemical Evolution of the Solid–Liquid Interface and the Role of the Crystallographic Orientation
AU - Pichler, Markus
AU - Si, Wenping
AU - Haydous, Fatima
AU - Téllez, Helena
AU - Druce, John
AU - Fabbri, Emiliana
AU - Kazzi, Mario El
AU - Döbeli, Max
AU - Ninova, Silviya
AU - Aschauer, Ulrich
AU - Wokaun, Alexander
AU - Pergolesi, Daniele
AU - Lippert, Thomas
N1 - Funding Information:
The authors would like to thank the Paul Scherrer Institut, the Swiss National Science Foundation (IZERZ0 142176), and the National Center for Competence in Research Discovery of New Materials (MARVEL) for financial support. S.N. and U.A. were supported by the Swiss National Science Foundation Professorship Grant PP00P2_157615. Calculations were performed on UBELIX (http://www.id.unibe.ch/hpc); the high performance computing (HPC) cluster at the University of Bern.
Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2017/5/25
Y1 - 2017/5/25
N2 - The size of the band gap and the energy position of the band edges make several oxynitride semiconductors promising candidates for efficient hydrogen and oxygen production under solar light illumination. Intense research efforts dedicated to oxynitride materials have unveiled the majority of their most important properties. However, two crucial aspects have received much less attention: One is the critical issue of compositional/structural surface modifications that occur during operation and how these affect photoelectrochemical performance. The second concerns the relation between electrochemical response and the crystallographic surface orientation of the oxynitride semiconductor. These are indeed topics of fundamental importance, since it is exactly at the surface where the visible-light-driven electrochemical reaction takes place. In contrast to conventional powder samples, thin films represent the best model system for these investigations. This study reviews current state-of-the-art oxynitride thin film fabrication and characterization, before focusing on LaTiO2N, selected as a representative photocatalyst. An investigation of the initial physicochemical evolution of the surface is reported. Then, it is shown that after stabilization the absorbed photon-to-current conversion efficiency of epitaxial thin films can differ by about 50% for different crystallographic surface orientations, and be up to 5 times larger than for polycrystalline samples.
AB - The size of the band gap and the energy position of the band edges make several oxynitride semiconductors promising candidates for efficient hydrogen and oxygen production under solar light illumination. Intense research efforts dedicated to oxynitride materials have unveiled the majority of their most important properties. However, two crucial aspects have received much less attention: One is the critical issue of compositional/structural surface modifications that occur during operation and how these affect photoelectrochemical performance. The second concerns the relation between electrochemical response and the crystallographic surface orientation of the oxynitride semiconductor. These are indeed topics of fundamental importance, since it is exactly at the surface where the visible-light-driven electrochemical reaction takes place. In contrast to conventional powder samples, thin films represent the best model system for these investigations. This study reviews current state-of-the-art oxynitride thin film fabrication and characterization, before focusing on LaTiO2N, selected as a representative photocatalyst. An investigation of the initial physicochemical evolution of the surface is reported. Then, it is shown that after stabilization the absorbed photon-to-current conversion efficiency of epitaxial thin films can differ by about 50% for different crystallographic surface orientations, and be up to 5 times larger than for polycrystalline samples.
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U2 - 10.1002/adfm.201605690
DO - 10.1002/adfm.201605690
M3 - Review article
AN - SCOPUS:85017389207
SN - 1616-301X
VL - 27
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 20
M1 - 1605690
ER -