Laser Assisted Doping of Silicon Carbide Thin Films Grown by Pulsed Laser Deposition

Emmanuel Paneerselvam, Vinoth Kumar Lakshmi Narayanan, Nilesh J. Vasa, Mitsuhiro Higashihata, Daisuke Nakamura, Hiroshi Ikenoue, M. S. Ramachandra Rao

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Cubic silicon carbide (3C-SiC) films were grown by pulsed laser deposition (PLD) on magnesium oxide [MgO (100)] substrates at a substrate temperature of 800°C. Besides, p-type SiC was prepared by laser assisted doping of Al in the PLD grown intrinsic SiC film. The SiC phases, in the grown thin films, were confirmed by x-ray diffraction (XRD), Si–C bond structure is identified by Fourier-transform infrared spectroscopy spectrum analysis. Measurements based on the XRD and Raman scattering techniques confirmed improvement in crystallization of 3C-SiC thin films with the laser assisted doping. The studies on I–V characteristics by two probe technique, elemental analysis by energy dispersion spectrum, binding energy by x-ray photoelectron spectroscopy and carrier concentration by Hall effect, ensured Al doping in SiC thin film. From the UV–visible NIR spectroscopic analysis, the optical bandgap of the PLD grown 3C-SiC was obtained. Numerical analysis of temperature and carrier concentration distribution is simulated to understand the mechanism of laser assisted doping.

Original languageEnglish
Pages (from-to)3468-3478
Number of pages11
JournalJournal of Electronic Materials
Issue number6
Publication statusPublished - Jun 15 2019

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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