Large spin accumulation with long spin diffusion length in Cu/MgO/permalloy lateral spin valves

Taro Wakamura; Kohei Ohnishi; Yasuhiro Niimi; Yoshichika Otani

doi:10.1143/APEX.4.063002

Large spin accumulation with long spin diffusion length in Cu/MgO/permalloy lateral spin valves

Taro Wakamura, Kohei Ohnishi, Yasuhiro Niimi, Yoshichika Otani

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We study the effect of interface resistance on the spin injection and detection efficiency in Cu/MgO/permalloy (Py) lateral spin valve devices. Insertion of the MgO layer enhances the spin accumulation by a factor of ten at 10 K: the maximum value is 10m at the interface resistance of 1.7 × 10^-1 ω(μm)². The spin diffusion length of Cu reaches 1.3 μm at 10 K, which is twice larger than that of Ag/MgO/Py spin valves. As the interface resistance increases furthermore, the spin accumulation exponentially decreases. This can be explained by the large reduction of the spin polarization in the insulating layer.

Original language	English
Article number	063002
Journal	Applied Physics Express
Volume	4
Issue number	6
DOIs	https://doi.org/10.1143/APEX.4.063002
Publication status	Published - Jun 2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Large spin accumulation with long spin diffusion length in Cu/MgO/permalloy lateral spin valves",

abstract = "We study the effect of interface resistance on the spin injection and detection efficiency in Cu/MgO/permalloy (Py) lateral spin valve devices. Insertion of the MgO layer enhances the spin accumulation by a factor of ten at 10 K: the maximum value is 10m at the interface resistance of 1.7 × 10-1 ω(μm)2. The spin diffusion length of Cu reaches 1.3 μm at 10 K, which is twice larger than that of Ag/MgO/Py spin valves. As the interface resistance increases furthermore, the spin accumulation exponentially decreases. This can be explained by the large reduction of the spin polarization in the insulating layer.",

author = "Taro Wakamura and Kohei Ohnishi and Yasuhiro Niimi and Yoshichika Otani",

year = "2011",

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AU - Wakamura, Taro

AU - Ohnishi, Kohei

AU - Niimi, Yasuhiro

AU - Otani, Yoshichika

PY - 2011/6

Y1 - 2011/6

N2 - We study the effect of interface resistance on the spin injection and detection efficiency in Cu/MgO/permalloy (Py) lateral spin valve devices. Insertion of the MgO layer enhances the spin accumulation by a factor of ten at 10 K: the maximum value is 10m at the interface resistance of 1.7 × 10-1 ω(μm)2. The spin diffusion length of Cu reaches 1.3 μm at 10 K, which is twice larger than that of Ag/MgO/Py spin valves. As the interface resistance increases furthermore, the spin accumulation exponentially decreases. This can be explained by the large reduction of the spin polarization in the insulating layer.

AB - We study the effect of interface resistance on the spin injection and detection efficiency in Cu/MgO/permalloy (Py) lateral spin valve devices. Insertion of the MgO layer enhances the spin accumulation by a factor of ten at 10 K: the maximum value is 10m at the interface resistance of 1.7 × 10-1 ω(μm)2. The spin diffusion length of Cu reaches 1.3 μm at 10 K, which is twice larger than that of Ag/MgO/Py spin valves. As the interface resistance increases furthermore, the spin accumulation exponentially decreases. This can be explained by the large reduction of the spin polarization in the insulating layer.

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Large spin accumulation with long spin diffusion length in Cu/MgO/permalloy lateral spin valves

Abstract

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