Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth

Ryo Matsumura, Ryusuke Kato, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Large-grain SiGe-crystal-on-insulator is essential for fabrication of devices such as advanced thin film transistors and/or photosensors. For these purposes, rapid-melting growth of amorphous SiGe stripes (7%-20% Si concentration) on insulating substrates is investigated over a wide range of cooling rates (from 2 to 17 °C/s). The growth features of SiGe change dynamically, depending on the cooling rate. A low cooling rate produces large crystals with laterally graded Si concentration profiles caused by significant Si segregation during solidification. In contrast, a high cooling rate suppresses the Si segregation, but small grains form because of high spontaneous nucleation under super-cooling conditions. By tuning of the cooling rate, moderate super-cooling conditions are obtained as a function of the Si concentration. This controls both the Si segregation and the spontaneous nucleation, and produces large SiGe crystals (∼400μm length, 7%-20% Si concentration) with three-dimensionally uniform Si profiles.

Original languageEnglish
Article number102106
JournalApplied Physics Letters
Issue number10
Publication statusPublished - Sept 8 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth'. Together they form a unique fingerprint.

Cite this