TY - GEN
T1 - Large Current Output Digital Gate Driver Using Half-Bridge Digital-to-Analog Converter IC and Two Power MOSFETs
AU - Horii, Kohei
AU - Hata, Katsuhiro
AU - Wang, Ruizhi
AU - Saito, Wataru
AU - Takamiya, Makoto
N1 - Funding Information:
ACKNOWLEDGMENT The authors would like to thank Kenji Hatori, Kazuto Mikami, and Koji Tanaka of Mitsubishi Electric Corporation for the technical discussion and the support for measurements. This work was partially supported by NEDO (JPNP21009).
Funding Information:
The authors would like to thank Kenji Hatori, Kazuto Mikami, and Koji Tanaka of Mitsubishi Electric Corporation for the technical discussion and the support for measurements. This work was partially supported by NEDO (JPNP21009).
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - An 8-bit digital gate driver (DGD) using a half-bridge digital-to-analog converter (HB DAC) IC and two power MOSFETs is proposed to enable the output voltage swing of ± 15 V and the large gate current up to 58 A for a 6500 V, 1000 A IGBT module. In the turn-on measurements of IGBT at 3000 V and 1000 A, compared with the conventional single-step gate driving, the proposed active gate driving using DGD reduces the switching loss from 6.9 J to 4.8 J by 30 % at the same current overshoot of 1.3 kA and reduces the current overshoot from 1560 A to 1330 A by 15 % at the same switching loss of 5 J, which clearly shows the advantage of DGD for the 6500 V, 1000 A IGBT module. This paper is the first to demonstrate the advantages of DGD in the high-voltage, large-current IGBT modules.
AB - An 8-bit digital gate driver (DGD) using a half-bridge digital-to-analog converter (HB DAC) IC and two power MOSFETs is proposed to enable the output voltage swing of ± 15 V and the large gate current up to 58 A for a 6500 V, 1000 A IGBT module. In the turn-on measurements of IGBT at 3000 V and 1000 A, compared with the conventional single-step gate driving, the proposed active gate driving using DGD reduces the switching loss from 6.9 J to 4.8 J by 30 % at the same current overshoot of 1.3 kA and reduces the current overshoot from 1560 A to 1330 A by 15 % at the same switching loss of 5 J, which clearly shows the advantage of DGD for the 6500 V, 1000 A IGBT module. This paper is the first to demonstrate the advantages of DGD in the high-voltage, large-current IGBT modules.
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U2 - 10.1109/ISPSD49238.2022.9813669
DO - 10.1109/ISPSD49238.2022.9813669
M3 - Conference contribution
AN - SCOPUS:85134230246
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 293
EP - 296
BT - 2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
Y2 - 22 May 2022 through 25 May 2022
ER -