Large-area synthesis and transfer of multilayer hexagonal boron nitride for enhanced graphene device arrays

Satoru Fukamachi, Pablo Solís-Fernández, Kenji Kawahara, Daichi Tanaka, Toru Otake, Yung Chang Lin, Kazu Suenaga, Hiroki Ago

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


Multilayer hexagonal boron nitride (hBN) can be used to preserve the intrinsic physical properties of other two-dimensional materials in device structures. However, integrating the material into large-scale two-dimensional heterostructures remains challenging due to the difficulties in synthesizing high-quality large-area multilayer hBN and combining it with other two-dimensional material layers of the same scale. Here we show that centimetre-scale multilayer hBN can be synthesized on iron–nickel alloy foil by chemical vapour deposition, and then used as a substrate and as a surface-protecting layer in graphene field-effect transistors. We also develop an integrated electrochemical transfer and thermal treatment method that allows us to create high-performance graphene/hBN heterostacks. Arrays of graphene field-effect transistors fabricated by conventional and scalable methods show an enhancement in room-temperature carrier mobility when hBN is used as an insulating substrate, and a further increase—up to a value of 10,000 cm2 V−1 s−1—when graphene is encapsulated with another hBN sheet.

Original languageEnglish
Pages (from-to)126-136
Number of pages11
JournalNature Electronics
Issue number2
Publication statusPublished - Feb 2023

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering


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