K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering

Dongyi Qin; Kazumasa Iida; Zimeng Guo; Chao Wang; Hikaru Saito; Satoshi Hata; Michio Naito; Akiyasu Yamamoto

doi:10.1088/1361-6668/ac8025

K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering

Dongyi Qin, Kazumasa Iida, Zimeng Guo, Chao Wang, Hikaru Saito, Satoshi Hata, Michio Naito, Akiyasu Yamamoto

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Molecular beam epitaxy of K-doped Ba122 (Ba_1−xK _x Fe₂As₂) superconductor was realized on an MgO substrate. Microstructural observation revealed that the undoped Ba122 served as a perfect buffer layer for epitaxial growth of the K-doped Ba122. The film exhibited a high critical temperature of 39.8 K and a high critical current density of 3.9 MA cm⁻² at 4 K. The successful growth of epitaxial thin film will enable artificial single grain boundary on oxide bicrystal substrates and reveal the grain boundary transport nature of K-doped Ba122.

Original language	English
Article number	09LT01
Journal	Superconductor Science and Technology
Volume	35
Issue number	9
DOIs	https://doi.org/10.1088/1361-6668/ac8025
Publication status	Published - Sept 2022

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Materials Chemistry
Electrical and Electronic Engineering

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10.1088/1361-6668/ac8025

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title = "K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering",

abstract = "Molecular beam epitaxy of K-doped Ba122 (Ba1−x K x Fe2As2) superconductor was realized on an MgO substrate. Microstructural observation revealed that the undoped Ba122 served as a perfect buffer layer for epitaxial growth of the K-doped Ba122. The film exhibited a high critical temperature of 39.8 K and a high critical current density of 3.9 MA cm−2 at 4 K. The successful growth of epitaxial thin film will enable artificial single grain boundary on oxide bicrystal substrates and reveal the grain boundary transport nature of K-doped Ba122.",

author = "Dongyi Qin and Kazumasa Iida and Zimeng Guo and Chao Wang and Hikaru Saito and Satoshi Hata and Michio Naito and Akiyasu Yamamoto",

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T1 - K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering

AU - Qin, Dongyi

AU - Iida, Kazumasa

AU - Guo, Zimeng

AU - Wang, Chao

AU - Saito, Hikaru

AU - Hata, Satoshi

AU - Naito, Michio

AU - Yamamoto, Akiyasu

PY - 2022/9

Y1 - 2022/9

N2 - Molecular beam epitaxy of K-doped Ba122 (Ba1−x K x Fe2As2) superconductor was realized on an MgO substrate. Microstructural observation revealed that the undoped Ba122 served as a perfect buffer layer for epitaxial growth of the K-doped Ba122. The film exhibited a high critical temperature of 39.8 K and a high critical current density of 3.9 MA cm−2 at 4 K. The successful growth of epitaxial thin film will enable artificial single grain boundary on oxide bicrystal substrates and reveal the grain boundary transport nature of K-doped Ba122.

AB - Molecular beam epitaxy of K-doped Ba122 (Ba1−x K x Fe2As2) superconductor was realized on an MgO substrate. Microstructural observation revealed that the undoped Ba122 served as a perfect buffer layer for epitaxial growth of the K-doped Ba122. The film exhibited a high critical temperature of 39.8 K and a high critical current density of 3.9 MA cm−2 at 4 K. The successful growth of epitaxial thin film will enable artificial single grain boundary on oxide bicrystal substrates and reveal the grain boundary transport nature of K-doped Ba122.

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JF - Superconductor Science and Technology

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ER -

K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering

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