K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering

Dongyi Qin, Kazumasa Iida, Zimeng Guo, Chao Wang, Hikaru Saito, Satoshi Hata, Michio Naito, Akiyasu Yamamoto

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Molecular beam epitaxy of K-doped Ba122 (Ba1−x K x Fe2As2) superconductor was realized on an MgO substrate. Microstructural observation revealed that the undoped Ba122 served as a perfect buffer layer for epitaxial growth of the K-doped Ba122. The film exhibited a high critical temperature of 39.8 K and a high critical current density of 3.9 MA cm−2 at 4 K. The successful growth of epitaxial thin film will enable artificial single grain boundary on oxide bicrystal substrates and reveal the grain boundary transport nature of K-doped Ba122.

Original languageEnglish
Article number09LT01
JournalSuperconductor Science and Technology
Issue number9
Publication statusPublished - Sept 2022

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Materials Chemistry
  • Electrical and Electronic Engineering


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