TY - JOUR
T1 - Joule heating of field emitter tip fabricated on glass substrate
AU - Higa, Katsuya
AU - Asano, Tanemasa
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2004/5
Y1 - 2004/5
N2 - The increase in temperature during the operation of an array of Si field emitters fabricated on a glass substrate was investigated. A field emitter having a very high aspect ratio was prepared by the anodization of silicon. The results show that significant Joule heating due to emission current flow takes place at the emitter tip during electron emission, resulting in changes in field emission characteristics and the melting of the apex of the silicon tip when emitters are fabricated on a glass substrate.
AB - The increase in temperature during the operation of an array of Si field emitters fabricated on a glass substrate was investigated. A field emitter having a very high aspect ratio was prepared by the anodization of silicon. The results show that significant Joule heating due to emission current flow takes place at the emitter tip during electron emission, resulting in changes in field emission characteristics and the melting of the apex of the silicon tip when emitters are fabricated on a glass substrate.
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U2 - 10.1143/JJAP.43.2749
DO - 10.1143/JJAP.43.2749
M3 - Article
AN - SCOPUS:3142737355
SN - 0021-4922
VL - 43
SP - 2749
EP - 2750
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 5 A
ER -