A new type of Josephson non-destructive read out (NDRO) memory cell is presented, where a sense gate is coupled directly to the memory part, instead of the conventional magnetic coupling scheme. The memory cell operates without complexity of the sequence of signals, and the operation margin is shown to be plus or minus 20%. The equivalent circuit of the proposed memory cell is illustrated. Relation between the control current and the magnetic flux in the loop is discussed.
|Number of pages
|Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E
|Published - 1984
All Science Journal Classification (ASJC) codes
- General Engineering