TY - GEN
T1 - Island formation of SiC film on striated Si(001) substrates
AU - Kato, Yoshimine
AU - Sakumoto, Kazuo
PY - 2009/1/1
Y1 - 2009/1/1
N2 - SiC growth on as-received and striated Si(001) substrates was studied. SiC films were grown by pulsed-jet chemical vapor deposition using monomethylsilane as a gas source at 780°C. Two kinds of Si surfaces were prepared. One was an as-received Si(001) surface and the other was an striated (scratched) Si(001) surface. It was found that nucleation rate of SiC is quite different between these two kinds of surfaces. The film growth rate was very low for the as-received Si(001) surface compared with the striated surface, and after 8 hours of growth hardly any film was grown and only square-shaped islands were observed. On the other hand, for the undulant substrate about 100nm thick 3C-SiC film was grown after 8 hours of deposition. This film growth rate difference appears to be due to the difference in density of nucleation sites. For the as-received Si(001) surface, nucleation site density appears to be quite small due to the atomically flat surface. On the other hand, for the undulant surface, nucleation site density was large enough for the film to grow faster.
AB - SiC growth on as-received and striated Si(001) substrates was studied. SiC films were grown by pulsed-jet chemical vapor deposition using monomethylsilane as a gas source at 780°C. Two kinds of Si surfaces were prepared. One was an as-received Si(001) surface and the other was an striated (scratched) Si(001) surface. It was found that nucleation rate of SiC is quite different between these two kinds of surfaces. The film growth rate was very low for the as-received Si(001) surface compared with the striated surface, and after 8 hours of growth hardly any film was grown and only square-shaped islands were observed. On the other hand, for the undulant substrate about 100nm thick 3C-SiC film was grown after 8 hours of deposition. This film growth rate difference appears to be due to the difference in density of nucleation sites. For the as-received Si(001) surface, nucleation site density appears to be quite small due to the atomically flat surface. On the other hand, for the undulant surface, nucleation site density was large enough for the film to grow faster.
UR - http://www.scopus.com/inward/record.url?scp=63849283951&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=63849283951&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:63849283951
SN - 9780878493579
T3 - Materials Science Forum
SP - 227
EP - 230
BT - Silicon Carbide and Related Materials 2007
A2 - Fuyuki, Takashi
A2 - Okumura, Hajime
A2 - Fukuda, Kenji
A2 - Nishizawa, Shin-ichi
A2 - Kimoto, Tsunenobu
A2 - Suzuki, Akira
PB - Trans Tech Publications Ltd
T2 - 12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
Y2 - 14 October 2007 through 19 October 2007
ER -