TY - JOUR
T1 - Ionizing radiation induced luminescence properties of Mn-doped LiCa(Al,Ga)F6
AU - Yanagida, Takayuki
AU - Fukuda, Kentaro
AU - Okada, Go
AU - Watanabe, Kenichi
AU - Kawaguchi, Noriaki
N1 - Funding Information:
This work was supported by a Grant in Aid for Scientific Research (A)-26249147 from the Ministry of Education, Culture, Sports, Science and Technology of the Japanese government (MEXT) and partially by JST A-step. The Cooperative Research Project of Research Institute of Electronics, Shizuoka University, KRF foundation, Hitachi Metals Materials Science foundation, and Inamori foundation are also acknowledged.
Publisher Copyright:
© 2016, Springer Science+Business Media New York.
PY - 2017/5/1
Y1 - 2017/5/1
N2 - Optical, scintillation and dosimeter properties of Mn 0.3 and 10 mol% doped LiCaAlF6 and Mn 10 % doped LiCaAl0.9Ga0.1F6 crystals were studied. Mn2+ emission appeared around 520 nm in the photoluminescence, scintillation and optically stimulated luminescence (OSL). As a dosimeter, the OSL and thermally stimulated luminescence (TSL) dose response functions were evaluated, and both the OSL and TSL showed a good linearity between the irradiated X-ray dose and response signal intensity from 1 to 1000 mGy. Compared with previously reported Ce- or Eu-doped LiCaAlF6, OSL properties were improved.
AB - Optical, scintillation and dosimeter properties of Mn 0.3 and 10 mol% doped LiCaAlF6 and Mn 10 % doped LiCaAl0.9Ga0.1F6 crystals were studied. Mn2+ emission appeared around 520 nm in the photoluminescence, scintillation and optically stimulated luminescence (OSL). As a dosimeter, the OSL and thermally stimulated luminescence (TSL) dose response functions were evaluated, and both the OSL and TSL showed a good linearity between the irradiated X-ray dose and response signal intensity from 1 to 1000 mGy. Compared with previously reported Ce- or Eu-doped LiCaAlF6, OSL properties were improved.
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U2 - 10.1007/s10854-016-5917-z
DO - 10.1007/s10854-016-5917-z
M3 - Article
AN - SCOPUS:84992083409
SN - 0957-4522
VL - 28
SP - 6982
EP - 6988
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 10
ER -