TY - JOUR
T1 - Ion Migration-Induced Degradation and Efficiency Roll-off in Quasi-2D Perovskite Light-Emitting Diodes
AU - Cheng, Tai
AU - Tumen-Ulzii, Ganbaatar
AU - Klotz, Dino
AU - Watanabe, Satoru
AU - Matsushima, Toshinori
AU - Adachi, Chihaya
N1 - Funding Information:
This work was supported by the Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project (grant no. JPMJER1305), by the International Institute for Carbon Neutral Energy Research (WPI-I2CNER), by JSPS KAKENHI (grant nos. JP15K14149 and JP16H04192), and by The Canon Foundation. One of the authors, T.C., acknowledges the support of the China Scholarship Council (CSC, no. 201706730060) during his study period at Kyushu University.
Publisher Copyright:
Copyright © 2020 American Chemical Society.
PY - 2020/7/22
Y1 - 2020/7/22
N2 - Quasi-2D perovskites have attracted wide attention as the emitter of light-emitting diodes (LEDs) in recent years because of the ease of obtaining high external quantum efficiencies (EQEs). However, the quick degradation under continuous operation and significant EQE roll-off at high current densities are issues that need to be overcome for future practical applications using quasi-2D perovskite LEDs (PeLEDs). In this context, we discuss the mechanism of the degradation and EQE roll-off on the basis of ion migration. The migration of ligand cations though domain boundaries of quasi-2D perovskite films induces the gradual loss of defect passivation at the boundaries, which results in the reversible PeLED degradation and severe EQE roll-off. When the device operation time is long, the mobile cations enter and interact with the electron transport layer, leading to the stage of irreversible PeLED degradation. The device degradation mechanisms we discovered here are constructive for developing quasi-2D PeLEDs with better operational durability.
AB - Quasi-2D perovskites have attracted wide attention as the emitter of light-emitting diodes (LEDs) in recent years because of the ease of obtaining high external quantum efficiencies (EQEs). However, the quick degradation under continuous operation and significant EQE roll-off at high current densities are issues that need to be overcome for future practical applications using quasi-2D perovskite LEDs (PeLEDs). In this context, we discuss the mechanism of the degradation and EQE roll-off on the basis of ion migration. The migration of ligand cations though domain boundaries of quasi-2D perovskite films induces the gradual loss of defect passivation at the boundaries, which results in the reversible PeLED degradation and severe EQE roll-off. When the device operation time is long, the mobile cations enter and interact with the electron transport layer, leading to the stage of irreversible PeLED degradation. The device degradation mechanisms we discovered here are constructive for developing quasi-2D PeLEDs with better operational durability.
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U2 - 10.1021/acsami.0c06737
DO - 10.1021/acsami.0c06737
M3 - Article
C2 - 32573187
AN - SCOPUS:85088490009
SN - 1944-8244
VL - 12
SP - 33004
EP - 33013
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 29
ER -