Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist

Tanemasa Asano; Hiroshi Ishiwara; Seijiro Furukawa

doi:10.1016/0168-583X(89)90887-2

Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist

Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Effects of ion implantation on epitaxial CaF₂ films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF₂ films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 10¹⁶ cm^-2. It has also been found that optical properties of CaF₂ films change, even in hydrogen-implanted samples with a dose of 2 × 10¹⁶ cm^-2, after exposing the samples to an oxygen plasma.

Original language	English
Pages (from-to)	739-741
Number of pages	3
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	39
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(89)90887-2
Publication status	Published - Mar 2 1989
Externally published	Yes

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

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10.1016/0168-583X(89)90887-2

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title = "Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist",

abstract = "Effects of ion implantation on epitaxial CaF2 films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF2 films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 1016 cm-2. It has also been found that optical properties of CaF2 films change, even in hydrogen-implanted samples with a dose of 2 × 1016 cm-2, after exposing the samples to an oxygen plasma.",

author = "Tanemasa Asano and Hiroshi Ishiwara and Seijiro Furukawa",

year = "1989",

month = mar,

day = "2",

doi = "10.1016/0168-583X(89)90887-2",

language = "English",

volume = "39",

pages = "739--741",

journal = "Nuclear Inst. and Methods in Physics Research, B",

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T1 - Ion-irradiation-enhanced dissolution of epitaxial fluoride films

T2 - A new class of inorganic single-crystal ion resist

AU - Asano, Tanemasa

AU - Ishiwara, Hiroshi

AU - Furukawa, Seijiro

PY - 1989/3/2

Y1 - 1989/3/2

N2 - Effects of ion implantation on epitaxial CaF2 films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF2 films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 1016 cm-2. It has also been found that optical properties of CaF2 films change, even in hydrogen-implanted samples with a dose of 2 × 1016 cm-2, after exposing the samples to an oxygen plasma.

AB - Effects of ion implantation on epitaxial CaF2 films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF2 films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 1016 cm-2. It has also been found that optical properties of CaF2 films change, even in hydrogen-implanted samples with a dose of 2 × 1016 cm-2, after exposing the samples to an oxygen plasma.

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M3 - Article

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SN - 0168-583X

VL - 39

SP - 739

EP - 741

JO - Nuclear Inst. and Methods in Physics Research, B

JF - Nuclear Inst. and Methods in Physics Research, B

IS - 1-4

ER -

Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist

Abstract

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