ION IRRADIATION DAMAGE IN EPITAXIAL CaF//2 ON Si.

In order to fabricate electronic devices in the Si/CaF//2/Si structures, it is necessary to investigate ion irradiation effects in CaF//2 films, since ion beam processes such as ion implantation are often used in the device fabrication. In the present work, radiation damage in epitaxial CaF//2 films on Si substrates produced by Ar** plus ion implantation and its annealing behavior are investigated.