Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO2

Masanobu Miyao, Isao Tsunoda, Taizoh Sadoh, Atsushi Kenjo

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33 Citations (Scopus)


Influences of ion-beam irradiation on solid-phase-crystallization of a-Si on SiO2 were studied in the temperature range between 200 and 700 °C. Significant enhancement of crystal nucleation was observed under ion irradiation (25 keV, 1×1016 Ar+ cm-2). As a result, nucleation at a temperature lower than that of the softening of soda-lime glass (450 °C) becomes possible. In addition, nuclei growth along the [111] and [110] directions was detected using X-ray diffraction methods. These are a big advantage for the fabrication of high-quality and low-cost thin-film transistors on glass substrates.

Original languageEnglish
Pages (from-to)104-106
Number of pages3
JournalThin Solid Films
Issue number1-2
Publication statusPublished - Feb 15 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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