Ion beam modified photoresist - A new class of field emitter material for large area devices

Tanemasa Asano, Daisuke Sasaguri, Katsuya Higa

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2 Citations (Scopus)


Ion beam irradiation effects on a novolac positive-tone photoresist and its application to micron-size field emitters have been investigated. Irradiation of Ar and P ions was examined. The electrical resistivity of the photoresist film is found to decrease after Ar ion implantation at doses on the order of 1016 cm-2. Baking of the photoresist prior to irradiation at a high temperature is preferred to produce electrical conductivity. P ions show weaker effects than Ar ions. Raman spectroscopy shows that carbon-carbon bonds such as the graphite bond are produced due to ion bombardment. The field emission of electrons is observed from emitters made of the ion-irradiated photoresist. The emission current is shown to be fairly stable when it is compared with an emission characteristic of synthesized diamond. Fabrication of field emitter arrays using a mold technique is demonstrated. The field emitter array shows emission at a current level of about 40 μA.

Original languageEnglish
Pages (from-to)1715-1720
Number of pages6
JournalIEICE Transactions on Electronics
Issue number11
Publication statusPublished - Jan 1 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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