Ion beam modification of a photoresist and its application to field emitters

Tanemasa Asano, Daisnke Sasaguri, Eiji Shibata, Katsuya Higa

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19 Citations (Scopus)


Ion beam irradiation effects on a novolac positive-tone photoresist and its application to micron-size field emitters have been investigated. Irradiation of Ar and P ions was examined. The electrical resistivity of the photoresist film is found to decrease after Ar ion implantation at doses on the order of 1016 cm-2. Baking of the photoresist prior to irradation at a high temperature is preferred to produce electrical conductivity. P ions show-weaker effects than Ar ions. Raman spectroscopy shows that carbon-carbon bonds such as the graphite bond are produced due to ion bombardment. The field emission of electrons is observed from emitters made of the ion-irradiated photoresist. The emission current is shown to be fairly stable when it is compared with an emission characteristic of synthesized diamond. Fabrication of field emitter arrays using a mold technique is demonstrated. The field emitter array shows emission at a current level of about 40 μA.

Original languageEnglish
Pages (from-to)7749-7753
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number12 SUPPL. B
Publication statusPublished - Dec 1997

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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