Ion-beam induced defect formation in α-alumina with applied electric field

T. Higuchi, K. Yasuda, K. Tanaka, K. Shiiyama, C. Kinoshita

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2 Citations (Scopus)


An attempt is made to understand the kinetic behavior of radiation-induced defects in α-Al2O3 irradiated with applied electric fields. To this end, a special device is developed for ion-beam irradiation on insulating ceramics at temperatures up to 920 K and with applied electric fields to 300 kV/m. We have found that electric fields of 100 and 300 kV/m influence the nucleation-and-growth process of defect clusters in α-Al2O3 irradiated with 100 keV He+ ions. The electric fields reduce the formation of interstitial-type dislocation loops at 760 K and retard the formation of defect clusters (probably vacancy-type clusters) at 870 K. Results are discussed in terms of the directed migration of interstitials and the recombination rate of vacancies and interstitials.

Original languageEnglish
Pages (from-to)103-108
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Publication statusPublished - May 2003
Event13th International conference on Ion beam modification of Mate - Kobe, Japan
Duration: Sept 1 2002Sept 6 2002

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation


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