An attempt is made to understand the kinetic behavior of radiation-induced defects in α-Al2O3 irradiated with applied electric fields. To this end, a special device is developed for ion-beam irradiation on insulating ceramics at temperatures up to 920 K and with applied electric fields to 300 kV/m. We have found that electric fields of 100 and 300 kV/m influence the nucleation-and-growth process of defect clusters in α-Al2O3 irradiated with 100 keV He+ ions. The electric fields reduce the formation of interstitial-type dislocation loops at 760 K and retard the formation of defect clusters (probably vacancy-type clusters) at 870 K. Results are discussed in terms of the directed migration of interstitials and the recombination rate of vacancies and interstitials.
|Number of pages
|Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
|Published - May 2003
|13th International conference on Ion beam modification of Mate - Kobe, Japan
Duration: Sept 1 2002 → Sept 6 2002
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics