Ion-beam-induced amorphous structures in silicon carbide

In Tae Bae, Manabu Ishimaru, Yoshihiko Hirotsu, Syo Matsumura, Kurt E. Sickafus

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)


Atomistic structure of ion-beam-induced amorphous silicon carbide (a-SiC) has been investigated by cross-sectional transmission electron microscopy. The electron intensities of halo patterns recorded on imaging plates were digitized quantitatively to extract reduced interference functions. We demonstrated the relationship between maximum scattering vector (Qmax) measured in scattering experiments and the resolution of the corresponding pair-distribution function by changing Qmax values from 160 to 230 nm-1. The results revealed that the C-C peak becomes broadened and eventually a shoulder as the Qmax value becomes shorter, indicating that Qmax values of <160 nm-1 measured in previous studies are not enough to detect C-C homonuclear bonds in a-SiC. We are the first to reveal the existence of C-C and Si-Si homonuclear bonds in a-SiC using a diffraction technique.

Original languageEnglish
Pages (from-to)974-978
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Publication statusPublished - May 2003
Event13th International conference on Ion beam modification of Mate - Kobe, Japan
Duration: Sept 1 2002Sept 6 2002

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation


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