Ion-beam enhanced stress-relaxation of SiGe on SiO2

M. Tanaka, T. Sadoh, M. Ninomiya, M. Nakamae, T. Enokida, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The Ge condensation by oxidation of SiGe/Si-on-insulator (SOI) structures enabled highly stress relaxed SGOI. However, the relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SiGe thickness below 50 nm. In order to enhance the relaxation rate in ultra-thin SGOI, the technique combined with H+ irradiation with medium dose (5×1015 cm-2) and post-annealing (1200 °C) has been developed. It was demonstrated that highly relaxed (70 %) ultra-thin SGOI with low defect density (<106 cm-2) has been realized by this technique.

Original languageEnglish
Title of host publicationGrowth, Modification and Analysis by Ion Beams at the Nanoscale
PublisherMaterials Research Society
Number of pages5
ISBN (Print)1558998632, 9781558998636
Publication statusPublished - 2005
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2005 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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