Investigation of the interface between LiNbO3 and Si wafers bonded by laser irradiation

Ryo Takigawa; Hiroki Kawano; Hiroshi Ikenoue; Tanemasa Asano

doi:10.7567/JJAP.56.088002

Investigation of the interface between LiNbO₃ and Si wafers bonded by laser irradiation

Ryo Takigawa
, Hiroki Kawano
, Hiroshi Ikenoue
, Tanemasa Asano

Integrated Electronic Systems

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

This paper focuses on the bonding interface of LiNbO₃ and Si wafers bonded by laser irradiation. The nanostructure and composite distribution across the bonding interface were investigated. The experimental interface analysis showed that no cracks or voids were formed at the nanolevel. It was also found that the bonding interface had a disordered amorphous layer containing Nb, O, and Si. This indicates that a strong bond was achieved because fusion bonding proceeded at the interface between LiNbO₃ and Si. In addition, the effectiveness of this bonding method for the wafer-level bonding of LiNbO₃ and Si was demonstrated.

Original language	English
Article number	088002
Journal	Japanese journal of applied physics
Volume	56
Issue number	8
DOIs	https://doi.org/10.7567/JJAP.56.088002
Publication status	Published - Aug 2017

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.7567/JJAP.56.088002

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abstract = "This paper focuses on the bonding interface of LiNbO3 and Si wafers bonded by laser irradiation. The nanostructure and composite distribution across the bonding interface were investigated. The experimental interface analysis showed that no cracks or voids were formed at the nanolevel. It was also found that the bonding interface had a disordered amorphous layer containing Nb, O, and Si. This indicates that a strong bond was achieved because fusion bonding proceeded at the interface between LiNbO3 and Si. In addition, the effectiveness of this bonding method for the wafer-level bonding of LiNbO3 and Si was demonstrated.",

author = "Ryo Takigawa and Hiroki Kawano and Hiroshi Ikenoue and Tanemasa Asano",

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AU - Takigawa, Ryo

AU - Kawano, Hiroki

AU - Ikenoue, Hiroshi

AU - Asano, Tanemasa

PY - 2017/8

Y1 - 2017/8

N2 - This paper focuses on the bonding interface of LiNbO3 and Si wafers bonded by laser irradiation. The nanostructure and composite distribution across the bonding interface were investigated. The experimental interface analysis showed that no cracks or voids were formed at the nanolevel. It was also found that the bonding interface had a disordered amorphous layer containing Nb, O, and Si. This indicates that a strong bond was achieved because fusion bonding proceeded at the interface between LiNbO3 and Si. In addition, the effectiveness of this bonding method for the wafer-level bonding of LiNbO3 and Si was demonstrated.

AB - This paper focuses on the bonding interface of LiNbO3 and Si wafers bonded by laser irradiation. The nanostructure and composite distribution across the bonding interface were investigated. The experimental interface analysis showed that no cracks or voids were formed at the nanolevel. It was also found that the bonding interface had a disordered amorphous layer containing Nb, O, and Si. This indicates that a strong bond was achieved because fusion bonding proceeded at the interface between LiNbO3 and Si. In addition, the effectiveness of this bonding method for the wafer-level bonding of LiNbO3 and Si was demonstrated.

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JF - Japanese journal of applied physics

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Investigation of the interface between LiNbO₃ and Si wafers bonded by laser irradiation

Abstract

All Science Journal Classification (ASJC) codes

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