Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam

K. Matsunaga; T. Hayashi; S. Kurokawa; H. Yokoo; N. Hasegawa; M. Nishikino; T. Kumada; T. Otobe; Y. Matsukawa; Y. Takaya

doi:10.1007/978-3-319-73025-7_48

Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam

K. Matsunaga, T. Hayashi, S. Kurokawa, H. Yokoo, N. Hasegawa, M. Nishikino, T. Kumada, T. Otobe, Y. Matsukawa, Y. Takaya

Manufacturing Process

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The authors investigate a low-fluence laser processing system with a femtosecond double-pulse beam and surface excitation of a power semiconductor wafer. The double-pulse laser processing method enables a semiconductor surface to be processed at a lower fluence and prevents penetration damage of the processed surface. The first pulse of the double beam is considered to have a role in exciting the semiconductor surface to increase the efficiency of light energy absorption. In this report, to verify the feasibility of low-fluence processing, we measure the damage threshold in the low-fluence ablation process.

Original language	English
Title of host publication	X-Ray Lasers 2016 - Proceedings of the 15th International Conference on X-Ray Lasers
Editors	Tetsuya Kawachi, Sergei V. Bulanov, Hiroyuki Daido, Yoshiaki Kato
Publisher	Springer Science and Business Media, LLC
Pages	321-326
Number of pages	6
ISBN (Print)	9783319730240
DOIs	https://doi.org/10.1007/978-3-319-73025-7_48
Publication status	Published - 2018
Event	15th International Conference on X-Ray Lasers, ICXRL 2016 - Nara, Japan Duration: May 22 2016 → May 27 2016

Publication series

Name	Springer Proceedings in Physics
Volume	202
ISSN (Print)	0930-8989
ISSN (Electronic)	1867-4941

Other

Other	15th International Conference on X-Ray Lasers, ICXRL 2016
Country/Territory	Japan
City	Nara
Period	5/22/16 → 5/27/16

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1007/978-3-319-73025-7_48

Cite this

Matsunaga, K., Hayashi, T., Kurokawa, S., Yokoo, H., Hasegawa, N., Nishikino, M., Kumada, T., Otobe, T., Matsukawa, Y., & Takaya, Y. (2018). Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam. In T. Kawachi, S. V. Bulanov, H. Daido, & Y. Kato (Eds.), X-Ray Lasers 2016 - Proceedings of the 15th International Conference on X-Ray Lasers (pp. 321-326). (Springer Proceedings in Physics; Vol. 202). Springer Science and Business Media, LLC. https://doi.org/10.1007/978-3-319-73025-7_48

Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam. / Matsunaga, K.; Hayashi, T.; Kurokawa, S. et al.
X-Ray Lasers 2016 - Proceedings of the 15th International Conference on X-Ray Lasers. ed. / Tetsuya Kawachi; Sergei V. Bulanov; Hiroyuki Daido; Yoshiaki Kato. Springer Science and Business Media, LLC, 2018. p. 321-326 (Springer Proceedings in Physics; Vol. 202).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsunaga, K, Hayashi, T , Kurokawa, S, Yokoo, H, Hasegawa, N, Nishikino, M, Kumada, T, Otobe, T, Matsukawa, Y & Takaya, Y 2018, Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam. in T Kawachi, SV Bulanov, H Daido & Y Kato (eds), X-Ray Lasers 2016 - Proceedings of the 15th International Conference on X-Ray Lasers. Springer Proceedings in Physics, vol. 202, Springer Science and Business Media, LLC, pp. 321-326, 15th International Conference on X-Ray Lasers, ICXRL 2016, Nara, Japan, 5/22/16. https://doi.org/10.1007/978-3-319-73025-7_48

Matsunaga K, Hayashi T , Kurokawa S, Yokoo H, Hasegawa N, Nishikino M et al. Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam. In Kawachi T, Bulanov SV, Daido H, Kato Y, editors, X-Ray Lasers 2016 - Proceedings of the 15th International Conference on X-Ray Lasers. Springer Science and Business Media, LLC. 2018. p. 321-326. (Springer Proceedings in Physics). doi: 10.1007/978-3-319-73025-7_48

Matsunaga, K. ; Hayashi, T. ; Kurokawa, S. et al. / Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam. X-Ray Lasers 2016 - Proceedings of the 15th International Conference on X-Ray Lasers. editor / Tetsuya Kawachi ; Sergei V. Bulanov ; Hiroyuki Daido ; Yoshiaki Kato. Springer Science and Business Media, LLC, 2018. pp. 321-326 (Springer Proceedings in Physics).

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abstract = "The authors investigate a low-fluence laser processing system with a femtosecond double-pulse beam and surface excitation of a power semiconductor wafer. The double-pulse laser processing method enables a semiconductor surface to be processed at a lower fluence and prevents penetration damage of the processed surface. The first pulse of the double beam is considered to have a role in exciting the semiconductor surface to increase the efficiency of light energy absorption. In this report, to verify the feasibility of low-fluence processing, we measure the damage threshold in the low-fluence ablation process.",

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AB - The authors investigate a low-fluence laser processing system with a femtosecond double-pulse beam and surface excitation of a power semiconductor wafer. The double-pulse laser processing method enables a semiconductor surface to be processed at a lower fluence and prevents penetration damage of the processed surface. The first pulse of the double beam is considered to have a role in exciting the semiconductor surface to increase the efficiency of light energy absorption. In this report, to verify the feasibility of low-fluence processing, we measure the damage threshold in the low-fluence ablation process.

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Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam

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