Investigation of Al-PMA effect on Al2O3/GeOX/Ge gate stack

Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, H. Nakashima

    Research output: Contribution to journalConference articlepeer-review

    2 Citations (Scopus)


    We investigated the Al post metallization annealing (PMA) effect on Al2O3/GeOX/Ge gate stacks. The Al-PMA is effective for Al2O3/GeOX/Ge gate stacks, similar to the case of SiO2/GeO2 gate stack. It was found that interface states density in the lower half of the band gap and slow trap density can be reduced by Al-PMA at 400°C. However, a serious problem occurred in the metal source/drain (S/D) MOSFET fabricated using the gate stack with Al-PMA, which was poor electrical isolation between gate and S/D. It was found that Al-PMA at 400°C caused the reaction of Al with Al2O3 film on the S/D side wall, resulting in a decrease in insulating quality of Al2O3 film. To solve this problem, we demonstrated a method for depositing a thin SiO2 film on the S/D side wall.

    Original languageEnglish
    Pages (from-to)261-266
    Number of pages6
    JournalECS Transactions
    Issue number6
    Publication statusPublished - 2014
    Event6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
    Duration: Oct 5 2014Oct 9 2014

    All Science Journal Classification (ASJC) codes

    • General Engineering


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