Intrinsic mechanisms of memristive switching

Kazuki Nagashima, Takeshi Yanagida, Keisuke Oka, Masaki Kanai, Annop Klamchuen, Jin Soo Kim, Bae Ho Park, Tomoji Kawai

Research output: Contribution to journalArticlepeer-review

103 Citations (Scopus)


Resistive switching (RS) memory effect in metal-oxide-metal junctions is a fascinating phenomenon toward next-generation universal nonvolatile memories. However the lack of understanding the electrical nature of RS has held back the applications. Here we demonstrate the electrical nature of bipolar RS in cobalt oxides, such as the conduction mechanism and the switching location, by utilizing a planar single oxide nanowire device. Experiments utilizing field effect devices and multiprobe measurements have shown that the nanoscale RS in cobalt oxides originates from redox events near the cathode with p-type conduction paths, which is in contrast with the prevailing oxygen vacancy based model.

Original languageEnglish
Pages (from-to)2114-2118
Number of pages5
JournalNano Letters
Issue number5
Publication statusPublished - May 11 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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