TY - JOUR
T1 - Intrinsic carrier transport properties of solution-processed organic-inorganic perovskite films
AU - Matsushima, Toshinori
AU - Hwang, Sunbin
AU - Terakawa, Shinobu
AU - Fujihara, Takashi
AU - Sandanayaka, Atula S.D.
AU - Qin, Chuanjiang
AU - Adachi, Chihaya
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/2
Y1 - 2017/2
N2 - The true performance of field-effect transistors with spin-coated organic-inorganic perovskite (C6H5C2H4NH3)2SnI4 semiconductor layers remains unknown because of the presence of contact resistance (RC). To evaluate the intrinsic carrier mobility (μ), we fabricated perovskite transistors with large channel lengths (L). The field-effect μ gradually increased with increasing L and then became constant in the large-L region, because of the reduced contribution of RC relative to the total resistance. The intrinsic μ values estimated from this region reached 26 and 4.8 cm2V%1 s%1 for holes and electrons, respectively, which are the highest ever reported in any perovskite transistor.
AB - The true performance of field-effect transistors with spin-coated organic-inorganic perovskite (C6H5C2H4NH3)2SnI4 semiconductor layers remains unknown because of the presence of contact resistance (RC). To evaluate the intrinsic carrier mobility (μ), we fabricated perovskite transistors with large channel lengths (L). The field-effect μ gradually increased with increasing L and then became constant in the large-L region, because of the reduced contribution of RC relative to the total resistance. The intrinsic μ values estimated from this region reached 26 and 4.8 cm2V%1 s%1 for holes and electrons, respectively, which are the highest ever reported in any perovskite transistor.
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U2 - 10.7567/APEX.10.024103
DO - 10.7567/APEX.10.024103
M3 - Article
AN - SCOPUS:85011661864
SN - 1882-0778
VL - 10
JO - Applied Physics Express
JF - Applied Physics Express
IS - 2
M1 - 024103
ER -