TY - JOUR
T1 - Intermetallic formation mechanisms and properties in room-temperature Ga soldering
AU - Liu, Shiqian
AU - Qu, Dongdong
AU - McDonald, Stuart
AU - Gu, Qinfen
AU - Matsumura, Syo
AU - Nogita, Kazuhiro
N1 - Funding Information:
The authors are grateful for funding from the University of Queensland-Nihon Superior collaborative Research Program (grant 2016001895 ), Australian synchrotron beamtime ( AS161PD10430 , AS172PD12140 ). This work was supported by the Nanotechnology Platform Project for advanced nanostructure characterisation ( JPMXP09-A-17-KU-0226 , JPMXP09-A-18-KU-0278 and JPMXP09-A-19-KU-0305 ) sponsored by MEXT Japan , the Progress 100 program at Kyushu University (KU) and a “UQ-KU project” at the University of Queensland (UQ) , which assists research collaborations between UQ and KU. The authors acknowledge the facilities, and the scientific and technical assistance, of the Australian Microscopy & Microanalysis Research Facility at the Centre for Microscopy and Microanalysis, The University of Queensland. S. Liu is financially supported by a University of Queensland International Scholarship and a China Scholarship Council Scholarship .
Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2020/6/15
Y1 - 2020/6/15
N2 - Ga and Ga-based alloys have received significant attention due to their potential applications as liquid metals and also for low temperature, or even room temperature, bonding in microelectronics. This study investigates the effect of In and Sn on the interfacial reactions between eutectic Ga-based alloys and Cu substrates at room temperature. The interfacial microstructures are characterised by electron microscopy and Synchrotron powder x-ray diffraction. In-situ heating observations are carried out to verify the thermal expansion properties of the intermetallic compounds formed with In and/or Sn additions in the Ga-based alloy/Cu reactions. The alloying elements are found to decrease the coefficient of thermal expansion of CuGa2 as the temperature increases. In and Sn are also examined with respect to their influence on the wettability of Ga-based alloys on Cu substrates under an argon atmosphere. The results are important to consider in the development of bonding processes involving Ga and Ga alloys.
AB - Ga and Ga-based alloys have received significant attention due to their potential applications as liquid metals and also for low temperature, or even room temperature, bonding in microelectronics. This study investigates the effect of In and Sn on the interfacial reactions between eutectic Ga-based alloys and Cu substrates at room temperature. The interfacial microstructures are characterised by electron microscopy and Synchrotron powder x-ray diffraction. In-situ heating observations are carried out to verify the thermal expansion properties of the intermetallic compounds formed with In and/or Sn additions in the Ga-based alloy/Cu reactions. The alloying elements are found to decrease the coefficient of thermal expansion of CuGa2 as the temperature increases. In and Sn are also examined with respect to their influence on the wettability of Ga-based alloys on Cu substrates under an argon atmosphere. The results are important to consider in the development of bonding processes involving Ga and Ga alloys.
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U2 - 10.1016/j.jallcom.2020.154221
DO - 10.1016/j.jallcom.2020.154221
M3 - Article
AN - SCOPUS:85079159128
SN - 0925-8388
VL - 826
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
M1 - 154221
ER -