Interfacial effect on metal/oxide nanowire junctions

Kazuki Nagashima, Takeshi Yanagida, Annop Klamchuen, Masaki Kanai, Keisuke Oka, Shu Seki, Tomoji Kawai

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


An interface in metal/oxide nanowire junctions plays a crucial role on the electronic device applications, especially two-terminal devices. Here we demonstrate the crucial role of interfacial effects on oxide (SnO 2-δ) nanowire/Pt junctions. The resistivity estimated from the I-V data of the junctions was four orders of magnitudes higher than that measured by a noncontact microwave conductivity method. We found that such apparent discrepancy is due to the presence of insulating oxidized interfacial layer. Since most conductive oxides are typically n -type semiconductors via oxygen vacancies, above implications will be rather universal and crucial for reproducible emerging nanodevices using oxide nanowires.

Original languageEnglish
Article number073110
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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