Interface structures of AlN/MgB2 thin films sputtered on sapphire c- and r-plane

H. Abe; M. Naito; W. J. Moon; K. Kaneko; A. Saito; Z. Wang

doi:10.1063/1.1769601

Interface structures of AlN/MgB₂ thin films sputtered on sapphire c- and r-plane

H. Abe, M. Naito, W. J. Moon, K. Kaneko, A. Saito, Z. Wang

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The influences of the substrates planes on the interface structures between AlN and MgB₂ layers were investigated. These layers were deposited on sapphire substrate with different orientations by a conventional method. Selected-area electron diffraction patterns and high-resolution TEM were applied on the cross-sectional thinned specimens.

Original language	English
Pages (from-to)	2343-2346
Number of pages	4
Journal	Journal of Applied Physics
Volume	96
Issue number	4
DOIs	https://doi.org/10.1063/1.1769601
Publication status	Published - Aug 15 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.1769601

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title = "Interface structures of AlN/MgB2 thin films sputtered on sapphire c- and r-plane",

abstract = "The influences of the substrates planes on the interface structures between AlN and MgB2 layers were investigated. These layers were deposited on sapphire substrate with different orientations by a conventional method. Selected-area electron diffraction patterns and high-resolution TEM were applied on the cross-sectional thinned specimens.",

author = "H. Abe and M. Naito and Moon, {W. J.} and K. Kaneko and A. Saito and Z. Wang",

note = "Funding Information: A part of this work was supported by “Nanotechnology Support Project” of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Thanks are greatly acknowledged to K. Tsujimoto for preparation of TEM specimen by FIE",

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AU - Abe, H.

AU - Naito, M.

AU - Moon, W. J.

AU - Kaneko, K.

AU - Saito, A.

AU - Wang, Z.

N1 - Funding Information: A part of this work was supported by “Nanotechnology Support Project” of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Thanks are greatly acknowledged to K. Tsujimoto for preparation of TEM specimen by FIE

PY - 2004/8/15

Y1 - 2004/8/15

N2 - The influences of the substrates planes on the interface structures between AlN and MgB2 layers were investigated. These layers were deposited on sapphire substrate with different orientations by a conventional method. Selected-area electron diffraction patterns and high-resolution TEM were applied on the cross-sectional thinned specimens.

AB - The influences of the substrates planes on the interface structures between AlN and MgB2 layers were investigated. These layers were deposited on sapphire substrate with different orientations by a conventional method. Selected-area electron diffraction patterns and high-resolution TEM were applied on the cross-sectional thinned specimens.

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Interface structures of AlN/MgB₂ thin films sputtered on sapphire c- and r-plane

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