Interface effects on the raman spectra of Si/3C-SiC superlattices

E. F. Bezerra; A. G. Souza Filho; J. Mendes Filho; V. Lemos; V. N. Freire; Y. Ikoma; F. Watanabe; T. Motooka

Interface effects on the raman spectra of Si/3C-SiC superlattices

E. F. Bezerra, A. G. Souza Filho, J. Mendes Filho, V. Lemos, V. N. Freire, Y. Ikoma, F. Watanabe, T. Motooka

Research output: Contribution to journal › Conference article › peer-review

Abstract

Theoretical calculations are performed on the role of smooth interfaces in the Raman spectra of Si/3C-SiC superlattices. The dispersion relations were obtained using a linear chain model with the alloyed interface δ-(3C-SiC)_0.5(Si)_0.5 described in the virtual crystal approximation. A modified bond-polarizability model was used to calculate the Raman spectra. The main results are the enhancement of the Raman spectra and the appearance of new peaks in between those related to the Si quasi confined and the 3C-SiC-confined modes with increasing number δ of interfacial monolayers (3C-SiC)_0.5(Si)_0.5. Some of the smooth interface related Raman peaks have intensity comparable with those of an abrupt Si/3C-SiC superlattice.

Original language	English
Pages (from-to)	H5.38.1-H5.38.4
Journal	Materials Research Society Symposium - Proceedings
Volume	640
Publication status	Published - 2001
Externally published	Yes
Event	Silicon Carbide- Materials, Processing and Devices - Boston, MA, United States Duration: Nov 27 2000 → Nov 29 2000

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{6a065115cfd44d6eb734718d3641fbce,

title = "Interface effects on the raman spectra of Si/3C-SiC superlattices",

abstract = "Theoretical calculations are performed on the role of smooth interfaces in the Raman spectra of Si/3C-SiC superlattices. The dispersion relations were obtained using a linear chain model with the alloyed interface δ-(3C-SiC)0.5(Si)0.5 described in the virtual crystal approximation. A modified bond-polarizability model was used to calculate the Raman spectra. The main results are the enhancement of the Raman spectra and the appearance of new peaks in between those related to the Si quasi confined and the 3C-SiC-confined modes with increasing number δ of interfacial monolayers (3C-SiC)0.5(Si)0.5. Some of the smooth interface related Raman peaks have intensity comparable with those of an abrupt Si/3C-SiC superlattice.",

author = "Bezerra, {E. F.} and {Souza Filho}, {A. G.} and {Mendes Filho}, J. and V. Lemos and Freire, {V. N.} and Y. Ikoma and F. Watanabe and T. Motooka",

note = "Funding Information: The Brazilian authors would like to acknowledge the Conselho Nacional de Desenvolvimento Cient{\'i}fico e Tecnol{\'o}gico (CNPq), and the Funda{\c c}{\~a}o de Amparo {\`a} Pesquisa do Estado de Cear{\'a} (FUNCAP), for financial support. One of the Japanese authors (Y. I.) appreciates a research fellowship from the Japan Society for the Promotion of Science (JSPS). The Japanese researchers have received partial financial support from the Ministry of Education, Science and Culture, Japan.; Silicon Carbide- Materials, Processing and Devices ; Conference date: 27-11-2000 Through 29-11-2000",

year = "2001",

language = "English",

volume = "640",

pages = "H5.38.1--H5.38.4",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Interface effects on the raman spectra of Si/3C-SiC superlattices

AU - Bezerra, E. F.

AU - Souza Filho, A. G.

AU - Mendes Filho, J.

AU - Lemos, V.

AU - Freire, V. N.

AU - Ikoma, Y.

AU - Watanabe, F.

AU - Motooka, T.

N1 - Funding Information: The Brazilian authors would like to acknowledge the Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq), and the Fundação de Amparo à Pesquisa do Estado de Ceará (FUNCAP), for financial support. One of the Japanese authors (Y. I.) appreciates a research fellowship from the Japan Society for the Promotion of Science (JSPS). The Japanese researchers have received partial financial support from the Ministry of Education, Science and Culture, Japan.

PY - 2001

Y1 - 2001

N2 - Theoretical calculations are performed on the role of smooth interfaces in the Raman spectra of Si/3C-SiC superlattices. The dispersion relations were obtained using a linear chain model with the alloyed interface δ-(3C-SiC)0.5(Si)0.5 described in the virtual crystal approximation. A modified bond-polarizability model was used to calculate the Raman spectra. The main results are the enhancement of the Raman spectra and the appearance of new peaks in between those related to the Si quasi confined and the 3C-SiC-confined modes with increasing number δ of interfacial monolayers (3C-SiC)0.5(Si)0.5. Some of the smooth interface related Raman peaks have intensity comparable with those of an abrupt Si/3C-SiC superlattice.

AB - Theoretical calculations are performed on the role of smooth interfaces in the Raman spectra of Si/3C-SiC superlattices. The dispersion relations were obtained using a linear chain model with the alloyed interface δ-(3C-SiC)0.5(Si)0.5 described in the virtual crystal approximation. A modified bond-polarizability model was used to calculate the Raman spectra. The main results are the enhancement of the Raman spectra and the appearance of new peaks in between those related to the Si quasi confined and the 3C-SiC-confined modes with increasing number δ of interfacial monolayers (3C-SiC)0.5(Si)0.5. Some of the smooth interface related Raman peaks have intensity comparable with those of an abrupt Si/3C-SiC superlattice.

UR - http://www.scopus.com/inward/record.url?scp=0034869946&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034869946&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034869946

SN - 0272-9172

VL - 640

SP - H5.38.1-H5.38.4

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Silicon Carbide- Materials, Processing and Devices

Y2 - 27 November 2000 through 29 November 2000

ER -

Interface effects on the raman spectra of Si/3C-SiC superlattices

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this