Intensity-modulated excimer laser annealing to obtain (001) surface-oriented poly-si films on glass: Molecular dynamics study

Norie Matsubara, Tomohiko Ogata, Takanori Mitani, Shinji Munetoh, Teruaki Motooka

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We have investigated the dependence of the melting and crystal growth rates on the crystal orientations at solid/liquid (s/l) silicon (Si) interfaces by molecular dynamics (MD) simulations. It was found that there was no appreciable difference in the melting rates in all crystal orientations, though the growth rate at Si(001)/l-Si was the largest in all crystal orientations. We have also performed MD simulations of intensity-modulated excimer laser annealing (IMELA) of Si thin films. These results suggest that (001) surface-oriented Si can be obtained by IMELA owing to the largest growth rate at Si(001)/l-Si of all in the repetitions of crystallization and melting.

    Original languageEnglish
    Title of host publicationMaterials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films
    Pages173-178
    Number of pages6
    Publication statusPublished - 2009
    Event2008 MRS Fall Meeting - Boston, MA, United States
    Duration: Dec 2 2008Dec 4 2008

    Publication series

    NameMaterials Research Society Symposium Proceedings
    Volume1150
    ISSN (Print)0272-9172

    Other

    Other2008 MRS Fall Meeting
    Country/TerritoryUnited States
    CityBoston, MA
    Period12/2/0812/4/08

    All Science Journal Classification (ASJC) codes

    • General Materials Science
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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