Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

Hideki Hirayama; Satoru Tanaka; Peter Ramvall; Yoshinobu Aoyagi

doi:10.1063/1.121168

Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

Hideki Hirayama, Satoru Tanaka, Peter Ramvall, Yoshinobu Aoyagi

Research output: Contribution to journal › Article › peer-review

137 Citations (Scopus)

Abstract

We demonstrate photoluminescence (PL) from self-assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metalorganic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition to three-dimensional nanoscale island formation by using "antisurfactant" silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ∼10nm and ∼5nm, respectively, by an atomic-force microscope (AFM). Indium mole fraction of In_xGa_1-xN QDs is controlled from x=∼0.22 to ∼0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, from the temperature dependence of the PL-peak energy, we convincingly show that the PL emission actually comes from the InGaN QDs.

Original language	English
Pages (from-to)	1736-1738
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	14
DOIs	https://doi.org/10.1063/1.121168
Publication status	Published - 1998
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.121168

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title = "Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces",

abstract = "We demonstrate photoluminescence (PL) from self-assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metalorganic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition to three-dimensional nanoscale island formation by using {"}antisurfactant{"} silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ∼10nm and ∼5nm, respectively, by an atomic-force microscope (AFM). Indium mole fraction of InxGa1-xN QDs is controlled from x=∼0.22 to ∼0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, from the temperature dependence of the PL-peak energy, we convincingly show that the PL emission actually comes from the InGaN QDs.",

author = "Hideki Hirayama and Satoru Tanaka and Peter Ramvall and Yoshinobu Aoyagi",

year = "1998",

doi = "10.1063/1.121168",

language = "English",

volume = "72",

pages = "1736--1738",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

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TY - JOUR

T1 - Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

AU - Hirayama, Hideki

AU - Tanaka, Satoru

AU - Ramvall, Peter

AU - Aoyagi, Yoshinobu

PY - 1998

Y1 - 1998

N2 - We demonstrate photoluminescence (PL) from self-assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metalorganic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition to three-dimensional nanoscale island formation by using "antisurfactant" silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ∼10nm and ∼5nm, respectively, by an atomic-force microscope (AFM). Indium mole fraction of InxGa1-xN QDs is controlled from x=∼0.22 to ∼0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, from the temperature dependence of the PL-peak energy, we convincingly show that the PL emission actually comes from the InGaN QDs.

AB - We demonstrate photoluminescence (PL) from self-assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metalorganic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition to three-dimensional nanoscale island formation by using "antisurfactant" silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ∼10nm and ∼5nm, respectively, by an atomic-force microscope (AFM). Indium mole fraction of InxGa1-xN QDs is controlled from x=∼0.22 to ∼0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, from the temperature dependence of the PL-peak energy, we convincingly show that the PL emission actually comes from the InGaN QDs.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

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