InSb mid-infrared photon detector for room-temperature operation

Koichiro Ueno, Edson Gomes Camargo, Takashi Katsumata, Hiromasa Goto, Naohiro Kuze, Yoshihiro Kangawa, Koichi Kakimoto

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25 Citations (Scopus)


We developed a small InSb mid-infrared (2-7 m wavelength range) photon detector that operates at room temperature. The photodiode was made from (hetero epitaxial) InSb layers that were grown on a semi-insulating GaAs substrate by molecular beam epitaxy. To suppress the effects of the diffusion current of the p-i-n photodiode, we used an AlInSb barrier layer that raises the resistance of the photodiode. We also optimized the device's doping concentration and the infrared incidence window structure. These optimization steps realized high photoelectric current output in a room-temperature environment. We also increased the signal-to-noise ratio of the detector by connecting multiple photodiodes in series. The size of this detector is 1:9 2:7 0:4mm3 and the detectivity is 2:8 108 cm Hz1=2/W at 300 K. This is a practical IR detector that can be used in general signal amplification ICs.

Original languageEnglish
Article number092202
JournalJapanese journal of applied physics
Issue number9
Publication statusPublished - Sept 2013

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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