Influences of Si pillar geometry on SiN-stressor induced local strain

Masanori Tanaka, Taizoh Sadoh, Jun Morioka, Tokuhide Kitamura, Masanobu Miyao

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


The local strains in Si pillars induced by SiN stressors were quantitatively investigated as a function of geometry by micro-Raman scattering spectroscopy. Raman shifts of a cantilever microstructure were twice as large as those of a bridge microstructure. This difference was due to the different dimensions of the strains, i.e., biaxial strains in the cantilever type and uniaxial strains in bridge type. The thermal stability of the SiN stressor was also investigated. The results showed induced strains were stable after post-annealing at high temperature (∼1000 °C).

Original languageEnglish
Pages (from-to)6226-6228
Number of pages3
JournalApplied Surface Science
Issue number19
Publication statusPublished - Jul 30 2008

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces


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