TY - JOUR
T1 - Influence of Sb in synthesize of ZnO nanowire using sandwich type substrate in carbothermal evaporation method
AU - Palani, I. A.
AU - Okazaki, K.
AU - Nakamura, D.
AU - Sakai, K.
AU - Higashihata, M.
AU - Okada, T.
N1 - Funding Information:
A part of this work was supported by Special Coordination Funds for Promoting Science and Technology from Japan Science and Technology Agency .
PY - 2012/2/1
Y1 - 2012/2/1
N2 - The paper deals with synthesis of Sb doped ZnO nanowire by considering Si coated with Sb and Au as substrate using carbothermal evaporation method. The horizontally oriented Sb doped ZnO nanowires with a diameter of 1 μm synthesized at 900 °C, which is quite high as compared to the Pure ZnO nanowires generated without the influence of Sb at 900 °C. The nanowire synthesized at 900 °C showed a measurable lower angle of about 0.06° from XRD and suppression of A 1 T and E 1 (L0) modes in Raman spectroscopic, this confirms the incorporation of Sb in ZnO lattice. The strong exciton emission and weak deep-level emission from room temperature PL and Strong emission attributed to the radiant recombination from neutral-acceptor-bound exciton (A 0 X) peak accompanied by two strong and broad emission of donor acceptor pair (DAP) from low temperature PL, this confirms the use of Sb as an acceptor for ZnO.
AB - The paper deals with synthesis of Sb doped ZnO nanowire by considering Si coated with Sb and Au as substrate using carbothermal evaporation method. The horizontally oriented Sb doped ZnO nanowires with a diameter of 1 μm synthesized at 900 °C, which is quite high as compared to the Pure ZnO nanowires generated without the influence of Sb at 900 °C. The nanowire synthesized at 900 °C showed a measurable lower angle of about 0.06° from XRD and suppression of A 1 T and E 1 (L0) modes in Raman spectroscopic, this confirms the incorporation of Sb in ZnO lattice. The strong exciton emission and weak deep-level emission from room temperature PL and Strong emission attributed to the radiant recombination from neutral-acceptor-bound exciton (A 0 X) peak accompanied by two strong and broad emission of donor acceptor pair (DAP) from low temperature PL, this confirms the use of Sb as an acceptor for ZnO.
UR - http://www.scopus.com/inward/record.url?scp=84856233244&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84856233244&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2011.11.124
DO - 10.1016/j.apsusc.2011.11.124
M3 - Article
AN - SCOPUS:84856233244
SN - 0169-4332
VL - 258
SP - 3611
EP - 3616
JO - Applied Surface Science
JF - Applied Surface Science
IS - 8
ER -