TY - JOUR
T1 - Influence of laser power on crystalline quality of InGaN with high indium content grown by pulse laser-assisted MOVPE
AU - Kangawa, Yoshihiro
AU - Kawaguchi, Norihito
AU - Kumagai, Yoshinao
AU - Koukitu, Akinori
N1 - Funding Information:
This work was carried out under the 21st Century COE (Center of Excellence) program of the Future Nano-Materials Research and Education Project, which is financially supported by the Ministry of Education, Science, Sports, Culture and Technology, at Tokyo University of Agriculture & Technology.
PY - 2004/12/10
Y1 - 2004/12/10
N2 - We carried out Nd:YAG pulse laser-assisted metalorganic vapor-phase epitaxy (LMOVPE) of InGaN at low temperatures in order to obtain films with high indium content. The results suggest that the reaction rate between group-III source gas and ammonia is enhanced by the pulse laser irradiation. Moreover, it is found that pulse laser may enhance the surface migration of the elements, and crystalline quality becomes good. These results imply that LMOVPE using Nd:YAG pulse laser is useful for the low-temperature growth of InGaN.
AB - We carried out Nd:YAG pulse laser-assisted metalorganic vapor-phase epitaxy (LMOVPE) of InGaN at low temperatures in order to obtain films with high indium content. The results suggest that the reaction rate between group-III source gas and ammonia is enhanced by the pulse laser irradiation. Moreover, it is found that pulse laser may enhance the surface migration of the elements, and crystalline quality becomes good. These results imply that LMOVPE using Nd:YAG pulse laser is useful for the low-temperature growth of InGaN.
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U2 - 10.1016/j.jcrysgro.2004.08.095
DO - 10.1016/j.jcrysgro.2004.08.095
M3 - Article
AN - SCOPUS:9944225534
SN - 0022-0248
VL - 272
SP - 444
EP - 448
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4 SPEC. ISS.
ER -