Influence of ion beam irradiation on solid-phase regrowth of amorphous Si on SiO2

I. Tsunoda, T. Nagata, T. Sadoh, A. Kenjo, M. Miyao

Research output: Contribution to journalConference articlepeer-review


We have investigated the influence of Ar+ ion beam irradiation on the solid-phase crystallization (SPC) of amorphous Si on SiO2. The results indicated that the annealing temperature required to begin the SPC drastically decreased by the utilization of Ar+ irradiation, i.e., 400°C for the samples with irradiation and 700°C for the samples without irradiation. In addition, both (111) and (220) Si peaks were observed in the XRD spectra for the samples annealed with Ar+ irradiation. In this way, new method of SPC at low temperature has been established.

Original languageEnglish
Pages (from-to)345-348
Number of pages4
JournalSolid State Phenomena
Publication statusPublished - 2001
Event6th International Workshop on Beam Injection assesment of Microstructures in Semiconductors (BIAMS 2000) - Fukuoka, Japan
Duration: Nov 12 2000Nov 16 2000

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • General Materials Science


Dive into the research topics of 'Influence of ion beam irradiation on solid-phase regrowth of amorphous Si on SiO2'. Together they form a unique fingerprint.

Cite this