TY - JOUR
T1 - Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers
AU - Czernecki, Robert
AU - Kret, Slawomir
AU - Kempisty, Pawel
AU - Grzanka, Ewa
AU - Plesiewicz, Jerzy
AU - Targowski, Greg
AU - Grzanka, Szymon
AU - Bilska, Marta
AU - Smalc-Koziorowska, Julita
AU - Krukowski, Stanislaw
AU - Suski, Tadek
AU - Perlin, Piotr
AU - Leszczynski, Mike
N1 - Funding Information:
The work has been sponsored by the grant of Polish National Agency of Research and Development – Nr Id 99531 , National Science Centre (NCN) of Poland Grant no. DEC-2011/01/N/ST3/04382 , NCBiR , grant INNOTECH-K1/HI1/6/157751/NCBR/12 , and IP Project of VII Framework NEWLED and by the project of the European Union within European Regional Development Fund, through grant Innovative Economy , POIG.01.01.02-00-008/08 and POIG.02.01-00-14-032/08 .
Publisher Copyright:
© 2014 Elsevier B.V.
PY - 2014
Y1 - 2014
N2 - The InGaN layers were grown using the Metalorganic Vapour Phase Epitaxy on bulk GaN substrates in a stop-and-go-mode (30 s growth, 30 s stop) and then examined using X-ray Diffraction (XRD), Photoluminescence (PL), Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM). The experiment was done in order to study an influence of hydrogen and TMIn flows during the growth-breaks on the InGaN layer. It was found that the presence of hydrogen during the breaks removes indium atoms from the already grown InGaN layer and delays In-incorporation into the subsequent one. As a result, instead of having about 18% of In in the continuously grown InGaN, we have only about 6% (average In-content) and the layer is thinner by more than 20%. In the case of having simultaneously H2and TMIn flows on during the breaks, we get three times less of In-atoms torn away and the layer has the thickness unchanged. The simultaneous presence of TMIn and H2also gave much smaller surface roughness as compared to the situation when only H2was on during the breaks.
AB - The InGaN layers were grown using the Metalorganic Vapour Phase Epitaxy on bulk GaN substrates in a stop-and-go-mode (30 s growth, 30 s stop) and then examined using X-ray Diffraction (XRD), Photoluminescence (PL), Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM). The experiment was done in order to study an influence of hydrogen and TMIn flows during the growth-breaks on the InGaN layer. It was found that the presence of hydrogen during the breaks removes indium atoms from the already grown InGaN layer and delays In-incorporation into the subsequent one. As a result, instead of having about 18% of In in the continuously grown InGaN, we have only about 6% (average In-content) and the layer is thinner by more than 20%. In the case of having simultaneously H2and TMIn flows on during the breaks, we get three times less of In-atoms torn away and the layer has the thickness unchanged. The simultaneous presence of TMIn and H2also gave much smaller surface roughness as compared to the situation when only H2was on during the breaks.
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U2 - 10.1016/j.jcrysgro.2014.05.027
DO - 10.1016/j.jcrysgro.2014.05.027
M3 - Article
AN - SCOPUS:84924577522
SN - 0022-0248
VL - 402
SP - 330
EP - 336
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -