TY - JOUR
T1 - Influence of hole accumulation on source resistance, kink effect and on-state breakdown of InP-based high electron mobility transistors
T2 - Light irradiation study
AU - Suemitsu, Tetsuya
AU - Fushimi, Hiroshi
AU - Kodama, Satoshi
AU - Tsunashima, Satoshi
AU - Kimura, Shunji
PY - 2002/2
Y1 - 2002/2
N2 - The influence of impact-ionized holes accumulating in the device was studied for InP-based InAlAs/InGaAs HEMTs using light irradiation experiments. Two parasitic phenomena arise from the generation of electron-hole pairs and subsequent accumulation of holes in the body of the device: The hole accumulation in the source region causes the decrease in the source resistance, which eliminates the kink effect. The hole accumulation in the gate region shifts the threshold voltage. This could be a positive feedback that increases the drain current at the on-state breakdown of the device.
AB - The influence of impact-ionized holes accumulating in the device was studied for InP-based InAlAs/InGaAs HEMTs using light irradiation experiments. Two parasitic phenomena arise from the generation of electron-hole pairs and subsequent accumulation of holes in the body of the device: The hole accumulation in the source region causes the decrease in the source resistance, which eliminates the kink effect. The hole accumulation in the gate region shifts the threshold voltage. This could be a positive feedback that increases the drain current at the on-state breakdown of the device.
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U2 - 10.1143/jjap.41.1104
DO - 10.1143/jjap.41.1104
M3 - Article
AN - SCOPUS:0036478696
SN - 0021-4922
VL - 41
SP - 1104
EP - 1107
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 2 B
ER -