TY - GEN
T1 - Influence of carrier lifetime control process in superjunction MOSFET characteristics
AU - Saito, Wataru
AU - Ono, Syotaro
AU - Yamashita, Hiroaki
PY - 2014
Y1 - 2014
N2 - This paper reports device characteristics of superjunction (SJ) MOSFETs employed with platinum (Pt) doping or electron irradiation processes for high speed recovery operation of the internal body diode. For the inverter application, high speed recovery operation of the internal body diode is necessary. 600 V-class SJ-MOSFETs were fabricated with a lifetime control process. In this paper, the influence of the carrier lifetime control process upon the on-resistance, leakage current and withstanding capability are reported. The lifetime control process modulates the static characteristics, and it is difficult to obtain the high speed operation with trr < 100 ns maintaining both low on-resistance and low leakage current. However, the withstanding capability is not problematic due to suppressing the carrier concentration by the short lifetime.
AB - This paper reports device characteristics of superjunction (SJ) MOSFETs employed with platinum (Pt) doping or electron irradiation processes for high speed recovery operation of the internal body diode. For the inverter application, high speed recovery operation of the internal body diode is necessary. 600 V-class SJ-MOSFETs were fabricated with a lifetime control process. In this paper, the influence of the carrier lifetime control process upon the on-resistance, leakage current and withstanding capability are reported. The lifetime control process modulates the static characteristics, and it is difficult to obtain the high speed operation with trr < 100 ns maintaining both low on-resistance and low leakage current. However, the withstanding capability is not problematic due to suppressing the carrier concentration by the short lifetime.
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U2 - 10.1109/ISPSD.2014.6855982
DO - 10.1109/ISPSD.2014.6855982
M3 - Conference contribution
AN - SCOPUS:84905512346
SN - 9781479929177
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 87
EP - 90
BT - Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
Y2 - 15 June 2014 through 19 June 2014
ER -