TY - JOUR
T1 - Influence of adhesion intermediate layers on the stability of nanodiamond composite films deposited on Si substrates by coaxial arc plasma
AU - Ali, Ali M.
AU - Egiza, Mohamed
AU - Murasawa, Koki
AU - Sugita, Hiroaki
AU - Deckert-Gaudig, Tanja
AU - Deckert, Volker
AU - Yoshitake, Tsuyoshi
N1 - Funding Information:
This research was partially supported by Osawa Scientific Studies Grants Foundation and JST A-STEP Stage II (seed development type AS2915051S) and JSPS KAKENHI (Grant number JP19H02436). The X-ray photoemission spectroscopic measurements were performed at beamline 12 of Saga Light Source/Kyushu Synchrotron Light Research Center (Proposal Nos. 1804026S, 1901139S, 1905035S, 1908066S, and 1911112S). Ali M. Ali, is grateful for financial assistance provided by the Kyushu University Advanced Graduated Program in Global Strategy. V. Deckert is partly supported by the Deutsche Forschungs Gemeinschaft (DFG) via the collaborative research center SFB 1278 (Polytarget Project B04).
Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
PY - 2020/6/1
Y1 - 2020/6/1
N2 - Nanodiamond composite (NDC) films deposited on silicon substrates by coaxial arc-plasma deposition at room temperature are easily peeled off with increasing film thickness. This research adapted additional NDC intermediate layers deposited at high temperatures, to induce atomic interdiffusion towards the Si substrates, which effectively enhances the adhesion of the intermediate layers with the substrates. In addition, the intermediate layers exhibit low residual stresses and hardnesses, and they can relieve large stresses of the top hard-layers. Consequently, the deposition of 1.5 μm thickness and 55 GPa hardness of NDC films on silicon substrates is possible, which opens up their applications in micro-electro-mechanical-systems and biosensors.
AB - Nanodiamond composite (NDC) films deposited on silicon substrates by coaxial arc-plasma deposition at room temperature are easily peeled off with increasing film thickness. This research adapted additional NDC intermediate layers deposited at high temperatures, to induce atomic interdiffusion towards the Si substrates, which effectively enhances the adhesion of the intermediate layers with the substrates. In addition, the intermediate layers exhibit low residual stresses and hardnesses, and they can relieve large stresses of the top hard-layers. Consequently, the deposition of 1.5 μm thickness and 55 GPa hardness of NDC films on silicon substrates is possible, which opens up their applications in micro-electro-mechanical-systems and biosensors.
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U2 - 10.35848/1882-0786/ab91d1
DO - 10.35848/1882-0786/ab91d1
M3 - Article
AN - SCOPUS:85085662327
SN - 1882-0778
VL - 13
JO - Applied Physics Express
JF - Applied Physics Express
IS - 6
M1 - 065506
ER -