Inductively coupled plasma application to the resist ashing

Ken ichi Takagi, Akihiro Ikeda, Tsuyoshi Fujimura, Yukinori Kuroki

Research output: Contribution to journalConference articlepeer-review

16 Citations (Scopus)


We present a study of a resist ashing using O2 inductively coupled plasma (ICP) at low pressure (<10 Pa). An ashing rate of 1.5 μm was obtained at 0.6 Pa by direct exposure to the plasma. However, a serious charge-up damage appeared owing to the radiation of a large amount of charged particles. On the contrary, a structure modification to restrict the charged particles could suppress the serious charge-up damage. The ashing rate dropped to below 20% of that directly exposed to the plasma. These ashing rates were proportional to the O* spectrum intensity directly above the substrate, which was strongly dependent on the pressure. The amount of the exited particles supplied to the substrate depended on the phenomena as a function of the pressure, such as a mean free path, a plasma distribution, etc. In this paper, the alternative magnetic field measurement in the plasma indicates the energy absorption decrease to the plasma at high pressure, which is an important factor of the ICP production for processing.

Original languageEnglish
Pages (from-to)160-164
Number of pages5
JournalThin Solid Films
Issue number2
Publication statusPublished - May 15 2001
Event12th Symposium on Plasma Science for Materials - Tokyo, Japan
Duration: Jun 16 2001Jun 17 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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