TY - GEN
T1 - Increasing laser-doping depth of al in 4H-SiC by using expanded-pulse excimer laser
AU - Ikeda, Akihiro
AU - Shimokawa, Takashi
AU - Ikenoue, Hiroshi
AU - Asano, Tanemasa
N1 - Funding Information:
This work is supported in part by Grants-in-Aid for Scientific Research (No. JP17K06387 and No. JP16H02342) from Japan Society for the Promotion of Science.
Publisher Copyright:
© 2019 Trans Tech Publications Ltd, Switzerland.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2019
Y1 - 2019
N2 - Al doping into 4H-SiC performed by irradiating pulse-width-expanded excimer laser to an Al film deposited on the 4H-SiC surface is investigated. An optical pulse stretcher was constructed to produce the laser pulse whose peak intensity was reduced as half as that of the original pulse and pulse width was expanded from 55 ns to 100 ns. The irradiation of the expanded pulses is found to reduce the ablation of the materials from the surface and enable irradiation of multiple shots. As a result, Al doping depth is significantly increased. The multiple shots of the expanded pulses are also found to decrease the sensitivity to spatial non-uniformity of laser intensity and increase the uniformity of doped region.
AB - Al doping into 4H-SiC performed by irradiating pulse-width-expanded excimer laser to an Al film deposited on the 4H-SiC surface is investigated. An optical pulse stretcher was constructed to produce the laser pulse whose peak intensity was reduced as half as that of the original pulse and pulse width was expanded from 55 ns to 100 ns. The irradiation of the expanded pulses is found to reduce the ablation of the materials from the surface and enable irradiation of multiple shots. As a result, Al doping depth is significantly increased. The multiple shots of the expanded pulses are also found to decrease the sensitivity to spatial non-uniformity of laser intensity and increase the uniformity of doped region.
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U2 - 10.4028/www.scientific.net/MSF.963.412
DO - 10.4028/www.scientific.net/MSF.963.412
M3 - Conference contribution
AN - SCOPUS:85071851351
SN - 9783035713329
T3 - Materials Science Forum
SP - 412
EP - 415
BT - Silicon Carbide and Related Materials, 2018
A2 - Gammon, Peter M.
A2 - Shah, Vishal A.
A2 - McMahon, Richard A.
A2 - Jennings, Michael R.
A2 - Vavasour, Oliver
A2 - Mawby, Philip A.
A2 - Padfield, Faye
PB - Trans Tech Publications Ltd
T2 - 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018
Y2 - 2 September 2018 through 6 September 2018
ER -