Increase in open-circuit voltage and improved stability of organic solar cells by inserting a molybdenum trioxide buffer layer

Hideyuki Murata; Yoshiki Kinoshita; Yoshihiro Kanai; Toshinori Matsushima; Yuya Ishii

doi:10.1557/proc-1154-b10-73

Increase in open-circuit voltage and improved stability of organic solar cells by inserting a molybdenum trioxide buffer layer

Hideyuki Murata, Yoshiki Kinoshita, Yoshihiro Kanai, Toshinori Matsushima, Yuya Ishii

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report an increase in open-circuit voltage (V_oc) by inserting an MoO₃ layer on ITO substrate to improve built-in potential of organic solar cells (OSCs). In the OSCs using 5,10,15,20-tetraphenylporphyrine (H₂TPP) as p-type material and C₆₀ as n-type material, the V_0c. effectively increased from 0.57 to 0.97 V with increasing MoO₃ thickness. The obtained highest V_oc (0.97 V) is consistent with the theoretical value estimated from the energy difference between the LUMO (-4.50 eV) of C₆₀ and the HOMO (-5.50 eV) of H ₂TPP layer. Importantly, the enhancement in the V_oc was achieved without affecting the short-circuit current density (J_sc) and the fill-factor (FF). Thus, the power conversion efficiency of the device increased linearly from 1.24% to 1.88%. We also demonstrated that a MoO ₃ buffer layer enhances the stability of OSCs after photo-irradiation. We have investigated the stability of OSCs using H ₂TPP and N,N'-di(1-naphthyl)-N,N-diphenylbenzidine as p-type layer. Both devices with MoO₃ layer showed improved stability. These results clearly suggest that the interface between ITO and p-type layer affects device stability.

Original language	English
Pages (from-to)	155-160
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	1154
DOIs	https://doi.org/10.1557/proc-1154-b10-73
Publication status	Published - 2009
Externally published	Yes
Event	2009 MRS Spring Meeting: MRS Symposium B on Concepts in Molecular and Organic Electronics - San Francisco, CA, United States Duration: Apr 13 2009 → Apr 17 2009

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Increase in open-circuit voltage and improved stability of organic solar cells by inserting a molybdenum trioxide buffer layer",

abstract = "We report an increase in open-circuit voltage (Voc) by inserting an MoO3 layer on ITO substrate to improve built-in potential of organic solar cells (OSCs). In the OSCs using 5,10,15,20-tetraphenylporphyrine (H2TPP) as p-type material and C60 as n-type material, the V0c. effectively increased from 0.57 to 0.97 V with increasing MoO3 thickness. The obtained highest Voc (0.97 V) is consistent with the theoretical value estimated from the energy difference between the LUMO (-4.50 eV) of C60 and the HOMO (-5.50 eV) of H 2TPP layer. Importantly, the enhancement in the Voc was achieved without affecting the short-circuit current density (Jsc) and the fill-factor (FF). Thus, the power conversion efficiency of the device increased linearly from 1.24% to 1.88%. We also demonstrated that a MoO 3 buffer layer enhances the stability of OSCs after photo-irradiation. We have investigated the stability of OSCs using H 2TPP and N,N'-di(1-naphthyl)-N,N-diphenylbenzidine as p-type layer. Both devices with MoO3 layer showed improved stability. These results clearly suggest that the interface between ITO and p-type layer affects device stability.",

author = "Hideyuki Murata and Yoshiki Kinoshita and Yoshihiro Kanai and Toshinori Matsushima and Yuya Ishii",

year = "2009",

doi = "10.1557/proc-1154-b10-73",

language = "English",

volume = "1154",

pages = "155--160",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2009 MRS Spring Meeting: MRS Symposium B on Concepts in Molecular and Organic Electronics ; Conference date: 13-04-2009 Through 17-04-2009",

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TY - JOUR

T1 - Increase in open-circuit voltage and improved stability of organic solar cells by inserting a molybdenum trioxide buffer layer

AU - Murata, Hideyuki

AU - Kinoshita, Yoshiki

AU - Kanai, Yoshihiro

AU - Matsushima, Toshinori

AU - Ishii, Yuya

PY - 2009

Y1 - 2009

N2 - We report an increase in open-circuit voltage (Voc) by inserting an MoO3 layer on ITO substrate to improve built-in potential of organic solar cells (OSCs). In the OSCs using 5,10,15,20-tetraphenylporphyrine (H2TPP) as p-type material and C60 as n-type material, the V0c. effectively increased from 0.57 to 0.97 V with increasing MoO3 thickness. The obtained highest Voc (0.97 V) is consistent with the theoretical value estimated from the energy difference between the LUMO (-4.50 eV) of C60 and the HOMO (-5.50 eV) of H 2TPP layer. Importantly, the enhancement in the Voc was achieved without affecting the short-circuit current density (Jsc) and the fill-factor (FF). Thus, the power conversion efficiency of the device increased linearly from 1.24% to 1.88%. We also demonstrated that a MoO 3 buffer layer enhances the stability of OSCs after photo-irradiation. We have investigated the stability of OSCs using H 2TPP and N,N'-di(1-naphthyl)-N,N-diphenylbenzidine as p-type layer. Both devices with MoO3 layer showed improved stability. These results clearly suggest that the interface between ITO and p-type layer affects device stability.

AB - We report an increase in open-circuit voltage (Voc) by inserting an MoO3 layer on ITO substrate to improve built-in potential of organic solar cells (OSCs). In the OSCs using 5,10,15,20-tetraphenylporphyrine (H2TPP) as p-type material and C60 as n-type material, the V0c. effectively increased from 0.57 to 0.97 V with increasing MoO3 thickness. The obtained highest Voc (0.97 V) is consistent with the theoretical value estimated from the energy difference between the LUMO (-4.50 eV) of C60 and the HOMO (-5.50 eV) of H 2TPP layer. Importantly, the enhancement in the Voc was achieved without affecting the short-circuit current density (Jsc) and the fill-factor (FF). Thus, the power conversion efficiency of the device increased linearly from 1.24% to 1.88%. We also demonstrated that a MoO 3 buffer layer enhances the stability of OSCs after photo-irradiation. We have investigated the stability of OSCs using H 2TPP and N,N'-di(1-naphthyl)-N,N-diphenylbenzidine as p-type layer. Both devices with MoO3 layer showed improved stability. These results clearly suggest that the interface between ITO and p-type layer affects device stability.

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T2 - 2009 MRS Spring Meeting: MRS Symposium B on Concepts in Molecular and Organic Electronics

Y2 - 13 April 2009 through 17 April 2009

ER -

Increase in open-circuit voltage and improved stability of organic solar cells by inserting a molybdenum trioxide buffer layer

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