Incorporation of higher-order silane radicals into A-SI:H films of high stability against light exposure

Masaharu Shiratani; Shinya Iwashita; Kouki Bando; Toshihisa Inoue; Kazunori Koga

doi:10.1109/WCPEC.2006.279791

Incorporation of higher-order silane radicals into A-SI:H films of high stability against light exposure

Masaharu Shiratani, Shinya Iwashita, Kouki Bando, Toshihisa Inoue, Kazunori Koga

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We have studied effects of higher-order silane (HOS) radicals on stability of a-Si:H films against light exposure by using a multi-hollow discharge plasma CVD method. For the method, a short gas residence time of ms in the discharge regions suppresses growth of a-Si:H nano-particles (hereafter referred to as clusters) and gas viscous force drives clusters toward the downstream region. Therefore, we can deposit a-Si:H films without incorporating clusters in the upstream region and such films show high stability. The method is effective in suppressing cluster amount in the discharges, while the method has little effects on Si₂H₅ and Si₃H₇ densities there.

Original language	English
Title of host publication	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Publisher	IEEE Computer Society
Pages	1596-1599
Number of pages	4
ISBN (Print)	1424400163, 9781424400164
DOIs	https://doi.org/10.1109/WCPEC.2006.279791
Publication status	Published - Jan 1 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: May 7 2006 → May 12 2006

Publication series

Name	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume	2

Other

Other	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	5/7/06 → 5/12/06

All Science Journal Classification (ASJC) codes

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/WCPEC.2006.279791

Cite this

Shiratani, M., Iwashita, S., Bando, K., Inoue, T., & Koga, K. (2006). Incorporation of higher-order silane radicals into A-SI:H films of high stability against light exposure. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 1596-1599). Article 4059957 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279791

Incorporation of higher-order silane radicals into A-SI:H films of high stability against light exposure. / Shiratani, Masaharu; Iwashita, Shinya; Bando, Kouki et al.
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 1596-1599 4059957 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shiratani, M, Iwashita, S, Bando, K, Inoue, T & Koga, K 2006, Incorporation of higher-order silane radicals into A-SI:H films of high stability against light exposure. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059957, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 2, IEEE Computer Society, pp. 1596-1599, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 5/7/06. https://doi.org/10.1109/WCPEC.2006.279791

Shiratani M, Iwashita S, Bando K, Inoue T, Koga K. Incorporation of higher-order silane radicals into A-SI:H films of high stability against light exposure. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 1596-1599. 4059957. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). doi: 10.1109/WCPEC.2006.279791

Shiratani, Masaharu ; Iwashita, Shinya ; Bando, Kouki et al. / Incorporation of higher-order silane radicals into A-SI:H films of high stability against light exposure. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. pp. 1596-1599 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

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abstract = "We have studied effects of higher-order silane (HOS) radicals on stability of a-Si:H films against light exposure by using a multi-hollow discharge plasma CVD method. For the method, a short gas residence time of ms in the discharge regions suppresses growth of a-Si:H nano-particles (hereafter referred to as clusters) and gas viscous force drives clusters toward the downstream region. Therefore, we can deposit a-Si:H films without incorporating clusters in the upstream region and such films show high stability. The method is effective in suppressing cluster amount in the discharges, while the method has little effects on Si2H5 and Si3H7 densities there.",

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Incorporation of higher-order silane radicals into A-SI:H films of high stability against light exposure

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UN SDGs

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