InAs MOS-HEMT power detector for 1.0 THz on quartz glass

Eiji Kume; Hiroyuki Ishii; Hiroyuki Hattori; Wen Hsin Chang; Mutsuo Ogura; Haruichi Kanaya; Tanemasa Asano; Tatsuro Maeda

doi:10.1109/EDTM.2017.7947562

InAs MOS-HEMT power detector for 1.0 THz on quartz glass

Eiji Kume, Hiroyuki Ishii, Hiroyuki Hattori, Wen Hsin Chang, Mutsuo Ogura, Haruichi Kanaya, Tanemasa Asano, Tatsuro Maeda

Integrated Electronic Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

Terahertz wave was detected in 1.0 THz using InAs MOS-HEMT as a non-biased (cold) FET power detector at room temperature. Terahertz power detector was fabricated on quartz glass substrate by direct-wafer-bonding technique. 1.0 THz signal power was directly input to the gate terminal with drain coupling in MOS-HEMT detector through the GSG THz probe. The high responsivity of around 60 V/W was achieved at the bias voltage of -0.4 V.

Original language	English
Title of host publication	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	196-197
Number of pages	2
ISBN (Electronic)	9781509046591
DOIs	https://doi.org/10.1109/EDTM.2017.7947562
Publication status	Published - Jun 13 2017
Event	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan Duration: Feb 28 2017 → Mar 2 2017

Publication series

Name	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
Country/Territory	Japan
City	Toyama
Period	2/28/17 → 3/2/17

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDTM.2017.7947562

Cite this

Kume, E., Ishii, H., Hattori, H., Chang, W. H., Ogura, M., Kanaya, H., Asano, T., & Maeda, T. (2017). InAs MOS-HEMT power detector for 1.0 THz on quartz glass. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 196-197). Article 7947562 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947562

InAs MOS-HEMT power detector for 1.0 THz on quartz glass. / Kume, Eiji; Ishii, Hiroyuki; Hattori, Hiroyuki et al.
2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 196-197 7947562 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kume, E, Ishii, H, Hattori, H, Chang, WH, Ogura, M, Kanaya, H , Asano, T & Maeda, T 2017, InAs MOS-HEMT power detector for 1.0 THz on quartz glass. in 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947562, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 196-197, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 2/28/17. https://doi.org/10.1109/EDTM.2017.7947562

Kume E, Ishii H, Hattori H, Chang WH, Ogura M, Kanaya H et al. InAs MOS-HEMT power detector for 1.0 THz on quartz glass. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 196-197. 7947562. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). doi: 10.1109/EDTM.2017.7947562

Kume, Eiji ; Ishii, Hiroyuki ; Hattori, Hiroyuki et al. / InAs MOS-HEMT power detector for 1.0 THz on quartz glass. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 196-197 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

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title = "InAs MOS-HEMT power detector for 1.0 THz on quartz glass",

abstract = "Terahertz wave was detected in 1.0 THz using InAs MOS-HEMT as a non-biased (cold) FET power detector at room temperature. Terahertz power detector was fabricated on quartz glass substrate by direct-wafer-bonding technique. 1.0 THz signal power was directly input to the gate terminal with drain coupling in MOS-HEMT detector through the GSG THz probe. The high responsivity of around 60 V/W was achieved at the bias voltage of -0.4 V.",

author = "Eiji Kume and Hiroyuki Ishii and Hiroyuki Hattori and Chang, {Wen Hsin} and Mutsuo Ogura and Haruichi Kanaya and Tanemasa Asano and Tatsuro Maeda",

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year = "2017",

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AU - Kume, Eiji

AU - Ishii, Hiroyuki

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AU - Chang, Wen Hsin

AU - Ogura, Mutsuo

AU - Kanaya, Haruichi

AU - Asano, Tanemasa

AU - Maeda, Tatsuro

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N2 - Terahertz wave was detected in 1.0 THz using InAs MOS-HEMT as a non-biased (cold) FET power detector at room temperature. Terahertz power detector was fabricated on quartz glass substrate by direct-wafer-bonding technique. 1.0 THz signal power was directly input to the gate terminal with drain coupling in MOS-HEMT detector through the GSG THz probe. The high responsivity of around 60 V/W was achieved at the bias voltage of -0.4 V.

AB - Terahertz wave was detected in 1.0 THz using InAs MOS-HEMT as a non-biased (cold) FET power detector at room temperature. Terahertz power detector was fabricated on quartz glass substrate by direct-wafer-bonding technique. 1.0 THz signal power was directly input to the gate terminal with drain coupling in MOS-HEMT detector through the GSG THz probe. The high responsivity of around 60 V/W was achieved at the bias voltage of -0.4 V.

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BT - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

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ER -

InAs MOS-HEMT power detector for 1.0 THz on quartz glass

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