Inactivation of the junction surfaces in SiGe/Si diodes

Fumihiko Hirose; Masashi Mukaida

Inactivation of the junction surfaces in SiGe/Si diodes

Fumihiko Hirose, Masashi Mukaida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have studied the optimum junction surface treatment of SiGe/Si/Si pin diodes with the i-layer thickness of 20 μm by I-V measurements and X-ray photoelectron spectroscopy. The I-V measurements indicated that the HF-acid dipping followed by the H₂SO₄ and H₂O ₂ treatment has the best breakdown voltages exceeding 300V at the leakage current of 100 μA/cm². In this treatment, the surface Ge is soluble in the H₂SO₂ and H₂O₂ treatment and only SiO₂ remains on the surface. On the other hand, low temperature oxidation with UV ozone or D₂ ambient resulted in lower breakdown voltages less than 200V, where Si and Ge oxides appear on the surface. The XPS studies suggest the surface GeO₂ causes the leakage current in the junction surface.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors, SOTAPOCS XLII and Processes at the Compound Semiconductor/Solution Interface - Proceedings of the International Symposium
Editors	P.C. Chang, K. Shiojima, D. Noel Buckley, S. Ahmed
Pages	399-405
Number of pages	7
Volume	PV 2005-04
Publication status	Published - 2005
Externally published	Yes
Event	207th ECS Meeting - Quebec, Canada Duration: May 16 2005 → May 20 2005

Other

Other	207th ECS Meeting
Country/Territory	Canada
City	Quebec
Period	5/16/05 → 5/20/05

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Inactivation of the junction surfaces in SiGe/Si diodes. / Hirose, Fumihiko; Mukaida, Masashi.
State-of-the-Art Program on Compound Semiconductors, SOTAPOCS XLII and Processes at the Compound Semiconductor/Solution Interface - Proceedings of the International Symposium. ed. / P.C. Chang; K. Shiojima; D. Noel Buckley; S. Ahmed. Vol. PV 2005-04 2005. p. 399-405.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hirose, F & Mukaida, M 2005, Inactivation of the junction surfaces in SiGe/Si diodes. in PC Chang, K Shiojima, D Noel Buckley & S Ahmed (eds), State-of-the-Art Program on Compound Semiconductors, SOTAPOCS XLII and Processes at the Compound Semiconductor/Solution Interface - Proceedings of the International Symposium. vol. PV 2005-04, pp. 399-405, 207th ECS Meeting, Quebec, Canada, 5/16/05.

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title = "Inactivation of the junction surfaces in SiGe/Si diodes",

abstract = "We have studied the optimum junction surface treatment of SiGe/Si/Si pin diodes with the i-layer thickness of 20 μm by I-V measurements and X-ray photoelectron spectroscopy. The I-V measurements indicated that the HF-acid dipping followed by the H2SO4 and H2O 2 treatment has the best breakdown voltages exceeding 300V at the leakage current of 100 μA/cm2. In this treatment, the surface Ge is soluble in the H2SO2 and H2O2 treatment and only SiO2 remains on the surface. On the other hand, low temperature oxidation with UV ozone or D2 ambient resulted in lower breakdown voltages less than 200V, where Si and Ge oxides appear on the surface. The XPS studies suggest the surface GeO2 causes the leakage current in the junction surface.",

author = "Fumihiko Hirose and Masashi Mukaida",

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pages = "399--405",

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booktitle = "State-of-the-Art Program on Compound Semiconductors, SOTAPOCS XLII and Processes at the Compound Semiconductor/Solution Interface - Proceedings of the International Symposium",

note = "207th ECS Meeting ; Conference date: 16-05-2005 Through 20-05-2005",

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T1 - Inactivation of the junction surfaces in SiGe/Si diodes

AU - Hirose, Fumihiko

AU - Mukaida, Masashi

PY - 2005

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N2 - We have studied the optimum junction surface treatment of SiGe/Si/Si pin diodes with the i-layer thickness of 20 μm by I-V measurements and X-ray photoelectron spectroscopy. The I-V measurements indicated that the HF-acid dipping followed by the H2SO4 and H2O 2 treatment has the best breakdown voltages exceeding 300V at the leakage current of 100 μA/cm2. In this treatment, the surface Ge is soluble in the H2SO2 and H2O2 treatment and only SiO2 remains on the surface. On the other hand, low temperature oxidation with UV ozone or D2 ambient resulted in lower breakdown voltages less than 200V, where Si and Ge oxides appear on the surface. The XPS studies suggest the surface GeO2 causes the leakage current in the junction surface.

AB - We have studied the optimum junction surface treatment of SiGe/Si/Si pin diodes with the i-layer thickness of 20 μm by I-V measurements and X-ray photoelectron spectroscopy. The I-V measurements indicated that the HF-acid dipping followed by the H2SO4 and H2O 2 treatment has the best breakdown voltages exceeding 300V at the leakage current of 100 μA/cm2. In this treatment, the surface Ge is soluble in the H2SO2 and H2O2 treatment and only SiO2 remains on the surface. On the other hand, low temperature oxidation with UV ozone or D2 ambient resulted in lower breakdown voltages less than 200V, where Si and Ge oxides appear on the surface. The XPS studies suggest the surface GeO2 causes the leakage current in the junction surface.

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BT - State-of-the-Art Program on Compound Semiconductors, SOTAPOCS XLII and Processes at the Compound Semiconductor/Solution Interface - Proceedings of the International Symposium

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A2 - Ahmed, S.

T2 - 207th ECS Meeting

Y2 - 16 May 2005 through 20 May 2005

ER -

Inactivation of the junction surfaces in SiGe/Si diodes

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All Science Journal Classification (ASJC) codes

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