In 0:75Ga0:25as quantum point contacts utilizing wrap-gate geometry

Hiroshi Irie, Yuichi Harada, Hiroki Sugiyama, Tatsushi Akazaki

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


A fabrication technique for quantum point contacts (QPCs) in an InGaAs/InAlAs two-dimensional electron gas heterostructure is reported. The key challenge in realizing a well-behaved QPC is efficient electrostatic control of a one-dimensional channel using the gate electrode. The fabricated QPCs employ a 100-nm-wide mesa constriction and a gate electrode that wraps around the constriction for three-dimensional electricfield gating. In addition, conformal aluminum-oxide growth by atomic layer deposition is employed to suppress gate leakage while minimizing the interface state density. The wrap-gate QPCs show clear conductance steps, demonstrating well-defined quantized transverse modes in the InGaAs-based one-dimensional channel.

Original languageEnglish
Article number024001
JournalApplied Physics Express
Issue number2
Publication statusPublished - Feb 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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