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In situ x-ray topography of silicon carbide during crystal growth by sublimation method
H. Yamaguchi, S. Nishizawa, T. Kato, N. Oyanagi, W. Bahng, S. Yoshida, K. Arai, Y. Machitani, T. Kikuchi
Research output: Contribution to journal › Article › peer-review
12
Citations
(Scopus)