In-situ observation of SiC bulk single crystal growth by X-ray topography

Tomohisa Kato, Naoki Oyanagi, Hirotaka Yamaguchi, Yukio Takano, Shin Ichi Nishizawa, Kazuo Arai

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


We report here for the first time on the in-situ observations for SiC bulk single crystal growth by x-ray topographic technique. Occurrence and dynamic observation of the defects such as micropipes and domain boundaries during SiC crystal growth by the modified Lely method was investigated in a real time display. The in-situ observation was considered to contribute for optimizing the growth conditions and to interpret the mechanism of defects and dislocations formation.

Original languageEnglish
Pages (from-to)I/-
JournalMaterials Science Forum
Publication statusPublished - 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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