In-situ observation of SiC bulk single crystal growth by X-ray topography

Tomohisa Kato; Naoki Oyanagi; Hirotaka Yamaguchi; Yukio Takano; Shin Ichi Nishizawa; Kazuo Arai

In-situ observation of SiC bulk single crystal growth by X-ray topography

Tomohisa Kato, Naoki Oyanagi, Hirotaka Yamaguchi, Yukio Takano, Shin Ichi Nishizawa, Kazuo Arai

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report here for the first time on the in-situ observations for SiC bulk single crystal growth by x-ray topographic technique. Occurrence and dynamic observation of the defects such as micropipes and domain boundaries during SiC crystal growth by the modified Lely method was investigated in a real time display. The in-situ observation was considered to contribute for optimizing the growth conditions and to interpret the mechanism of defects and dislocations formation.

Original language	English
Pages (from-to)	I/-
Journal	Materials Science Forum
Volume	338
Publication status	Published - 2000
Externally published	Yes
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "In-situ observation of SiC bulk single crystal growth by X-ray topography",

abstract = "We report here for the first time on the in-situ observations for SiC bulk single crystal growth by x-ray topographic technique. Occurrence and dynamic observation of the defects such as micropipes and domain boundaries during SiC crystal growth by the modified Lely method was investigated in a real time display. The in-situ observation was considered to contribute for optimizing the growth conditions and to interpret the mechanism of defects and dislocations formation.",

author = "Tomohisa Kato and Naoki Oyanagi and Hirotaka Yamaguchi and Yukio Takano and Nishizawa, {Shin Ichi} and Kazuo Arai",

year = "2000",

language = "English",

volume = "338",

pages = "I/--",

journal = "Materials Science Forum",

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publisher = "Trans Tech Publications",

note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

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TY - JOUR

T1 - In-situ observation of SiC bulk single crystal growth by X-ray topography

AU - Kato, Tomohisa

AU - Oyanagi, Naoki

AU - Yamaguchi, Hirotaka

AU - Takano, Yukio

AU - Nishizawa, Shin Ichi

AU - Arai, Kazuo

PY - 2000

Y1 - 2000

N2 - We report here for the first time on the in-situ observations for SiC bulk single crystal growth by x-ray topographic technique. Occurrence and dynamic observation of the defects such as micropipes and domain boundaries during SiC crystal growth by the modified Lely method was investigated in a real time display. The in-situ observation was considered to contribute for optimizing the growth conditions and to interpret the mechanism of defects and dislocations formation.

AB - We report here for the first time on the in-situ observations for SiC bulk single crystal growth by x-ray topographic technique. Occurrence and dynamic observation of the defects such as micropipes and domain boundaries during SiC crystal growth by the modified Lely method was investigated in a real time display. The in-situ observation was considered to contribute for optimizing the growth conditions and to interpret the mechanism of defects and dislocations formation.

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M3 - Conference article

AN - SCOPUS:12944281819

SN - 0255-5476

VL - 338

SP - I/-

JO - Materials Science Forum

JF - Materials Science Forum

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

In-situ observation of SiC bulk single crystal growth by X-ray topography

Abstract

All Science Journal Classification (ASJC) codes

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