In-plane orientation control of c-axis oriented YBa2Cu3O7-δ films on MgO substrates by BaSnO3 buffer layers

Masashi Mukaida; Yoshinobu Takano; Kazuaki Chiba; Takuo Moriya; Masanobu Kusunoki; Shigetoshi Ohshima

doi:10.1143/jjap.38.l926

In-plane orientation control of c-axis oriented YBa₂Cu₃O_7-δ films on MgO substrates by BaSnO₃ buffer layers

Masashi Mukaida, Yoshinobu Takano, Kazuaki Chiba, Takuo Moriya, Masanobu Kusunoki, Shigetoshi Ohshima

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

A new BaSnO₃ buffer layer is proposed for controlling the in-plane orientation of YBa₂Cu₃O_7-δ films grown on MgO substrates. BaSnO₃ buffer layers and YBa₂Cu₃O_7-δ films are grown by pulsed laser deposition. 45° grain boundaries in YBa₂Cu₃O_7-δ films grown on MgO (001) substrates, which are fatal defects for microwave device applications, are eliminated using the BaSnO₃ buffer layer. YBa₂Cu₃O_7-δ films grown at an optimum growth temperature of 710°C on BaSnO₃ buffer layers on MgO (001) substrates show lower surface resistance (R_S) than those on MgO (001) substrates without BaSnO₃ buffer layers.

Original language	English
Pages (from-to)	L926-L928
Journal	Japanese Journal of Applied Physics
Volume	38
Issue number	8 B
DOIs	https://doi.org/10.1143/jjap.38.l926
Publication status	Published - Aug 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.38.l926

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title = "In-plane orientation control of c-axis oriented YBa2Cu3O7-δ films on MgO substrates by BaSnO3 buffer layers",

abstract = "A new BaSnO3 buffer layer is proposed for controlling the in-plane orientation of YBa2Cu3O7-δ films grown on MgO substrates. BaSnO3 buffer layers and YBa2Cu3O7-δ films are grown by pulsed laser deposition. 45° grain boundaries in YBa2Cu3O7-δ films grown on MgO (001) substrates, which are fatal defects for microwave device applications, are eliminated using the BaSnO3 buffer layer. YBa2Cu3O7-δ films grown at an optimum growth temperature of 710°C on BaSnO3 buffer layers on MgO (001) substrates show lower surface resistance (RS) than those on MgO (001) substrates without BaSnO3 buffer layers.",

author = "Masashi Mukaida and Yoshinobu Takano and Kazuaki Chiba and Takuo Moriya and Masanobu Kusunoki and Shigetoshi Ohshima",

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T1 - In-plane orientation control of c-axis oriented YBa2Cu3O7-δ films on MgO substrates by BaSnO3 buffer layers

AU - Mukaida, Masashi

AU - Takano, Yoshinobu

AU - Chiba, Kazuaki

AU - Moriya, Takuo

AU - Kusunoki, Masanobu

AU - Ohshima, Shigetoshi

PY - 1999/8

Y1 - 1999/8

N2 - A new BaSnO3 buffer layer is proposed for controlling the in-plane orientation of YBa2Cu3O7-δ films grown on MgO substrates. BaSnO3 buffer layers and YBa2Cu3O7-δ films are grown by pulsed laser deposition. 45° grain boundaries in YBa2Cu3O7-δ films grown on MgO (001) substrates, which are fatal defects for microwave device applications, are eliminated using the BaSnO3 buffer layer. YBa2Cu3O7-δ films grown at an optimum growth temperature of 710°C on BaSnO3 buffer layers on MgO (001) substrates show lower surface resistance (RS) than those on MgO (001) substrates without BaSnO3 buffer layers.

AB - A new BaSnO3 buffer layer is proposed for controlling the in-plane orientation of YBa2Cu3O7-δ films grown on MgO substrates. BaSnO3 buffer layers and YBa2Cu3O7-δ films are grown by pulsed laser deposition. 45° grain boundaries in YBa2Cu3O7-δ films grown on MgO (001) substrates, which are fatal defects for microwave device applications, are eliminated using the BaSnO3 buffer layer. YBa2Cu3O7-δ films grown at an optimum growth temperature of 710°C on BaSnO3 buffer layers on MgO (001) substrates show lower surface resistance (RS) than those on MgO (001) substrates without BaSnO3 buffer layers.

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In-plane orientation control of c-axis oriented YBa₂Cu₃O_7-δ films on MgO substrates by BaSnO₃ buffer layers

Abstract

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